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Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector

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Abstract

Well-crystallized ZnO nanowire arrays were grown on GaN/sapphire by one-step chemical vapor deposition under control of the fabrication pressure of 1000–2500 Pa and the best-aligned arrays were obtained at 1000 Pa. A photoluminescence study shows a red shift with nanowire diameter increase. Under 365-nm UV irradiation of 0.3 mW/cm2, the photoresponse study of the best ZnO arrays shows an ultra-fast tri-exponential rise with three constants of 0.148, 0.064 and 0.613 s, and a bi-exponential decay behavior with two recovery constants of 30 and 270 ms. The ZnO/GaN heterojunction barriers could be responsible for the ultra-fast tri-exponential rise and bi-exponential decay behavior.

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Acknowledgement

This work is supported by NNSF of China (No. 11074082) and NCET (080230).

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Authors and Affiliations

  1. Wuhan National Laboratory for Optoelectronics, School of Physics, College of Optoelectronic Science & Engineering, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, People’s Republic of China

    Xianghui Zhang, Xiangyun Han, Jun Su, Qi Zhang & Yihua Gao

  2. Chongqing Police College, Chongqing, 401331, People’s Republic of China

    Xiangyun Han

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  1. Xianghui Zhang
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  2. Xiangyun Han
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  3. Jun Su
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  4. Qi Zhang
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  5. Yihua Gao
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Correspondence to Yihua Gao.

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Zhang, X., Han, X., Su, J. et al. Well vertically aligned ZnO nanowire arrays with an ultra-fast recovery time for UV photodetector. Appl. Phys. A 107, 255–260 (2012). https://doi.org/10.1007/s00339-012-6886-6

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  • DOI: https://doi.org/10.1007/s00339-012-6886-6

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