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Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure

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Abstract

The authors report on the fabrication and electronic transport property of LaAlO3/Nb-doped SrTiO3 heterostructure. The current–voltage curves of this heterostructure show hysteresis and a remarkable resistance switching behavior, which increase dramatically with decreasing temperature. Multiresistance states were realized by voltage pulses with different amplitudes and polarities and the ratio of the electrical pulse induced resistance change is larger than 104. More interestingly, the relaxation of junction current after switching follows the Curie–von Schweidler law J∝t −n with an exponential increase of n with temperature. The results were discussed in terms of the trap-controlled space charge limited conduction process via defects near the interface of the heterostructure.

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References

  1. S.Q. Liu, N.J. Wu, A. Ignatiev, Appl. Phys. Lett. 76, 2749 (2000)

    Article  ADS  Google Scholar 

  2. M.J. Rozenberg, I.H. Inoue, M.J. Sanchez, Phys. Rev. Lett. 92, 178302 (2004)

    Article  ADS  Google Scholar 

  3. M. Quintero, P. Levy, A.G. Leyva, M.J. Rozenberg, Phys. Rev. Lett. 98, 116601 (2007)

    Article  ADS  Google Scholar 

  4. Y.B. Nian, J. Strozier, N.J. Wu, X. Chen, A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007)

    Article  ADS  Google Scholar 

  5. C. Rossel, G.I. Meijer, D. Bremaud, D. Widmer, J. Appl. Phys. 90, 2892 (2001)

    Article  ADS  Google Scholar 

  6. M. Hamaguchi, K. Aoyama, S. Asanuma, Y. Uesu, Appl. Phys. Lett. 88, 142508 (2006)

    Article  ADS  Google Scholar 

  7. D.S. Shang, Q. Wang, L.D. Chen, R. Dong, X.M. Li, W.Q. Zhang, Phys. Rev. B 73, 245427 (2006)

    Article  ADS  Google Scholar 

  8. R. Fors, S.I. Khartsev, A.M. Grishin, Phys. Rev. B 71, 045305 (2005)

    Article  ADS  Google Scholar 

  9. A. Beck, J.G. Bednorz, Ch. Gerber, C. Rossel, D. Widmer, Appl. Phys. Lett. 77, 139 (2000)

    Article  ADS  Google Scholar 

  10. K. Szot, W. Speier, G. Bihlmayer, R. Waser, Nat. Mater. 5, 312 (2006)

    Article  ADS  Google Scholar 

  11. I.H. Inoue, S. Yasuda, H. Akinaga, H. Takagi, Phys. Rev. B 77, 035105 (2008)

    Article  ADS  Google Scholar 

  12. R. Dong, D.S. Lee, W.F. Xiang, S.J. Oh, D.J. Seong, S.H. Heo, H.J. Choi, M.J. Kwon, S.N. Seo, M.B. Pyun, M. Hasan, H. Hwang, Appl. Phys. Lett. 90, 042107 (2007)

    Article  ADS  Google Scholar 

  13. A. Yamamoto, A. Sawa, H. Akoh, M. Kawasaki, Y. Tokura, Appl. Phys. Lett. 90, 112104 (2007)

    Article  ADS  Google Scholar 

  14. T. Fujii, M. Kawasaki, A. Sawa, Y. Kawazoe, H. Akoh, Y. Tokura, Phys. Rev. B 75, 165101 (2007)

    Article  ADS  Google Scholar 

  15. M.C. Ni, S.M. Guo, H.F. Tian, Y.G. Zhao, J.Q. Li, Appl. Phys. Lett. 91, 183502 (2007)

    Article  ADS  Google Scholar 

  16. H.J. Zhang, X.P. Zhang, J.P. Shi, H.F. Tian, Y.G. Zhao, Appl. Phys. Lett. 94, 092111 (2009)

    Article  ADS  Google Scholar 

  17. A.K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectrics, London, 1983)

    Google Scholar 

  18. A.A. Alagiriswamy, K.S. Narayan, G. Raju, J. Phys. D 35, 2850 (2002)

    Article  ADS  Google Scholar 

  19. S.-G. Yoon, A.I. Kingon, S.-H. Kim, J. Appl. Phys. 88, 6690 (2000)

    Article  ADS  Google Scholar 

  20. X.G. Tang, J. Wang, Y.W. Zhang, H.L.W. Chan, J. Appl. Phys. 94, 5163 (2003)

    Article  ADS  Google Scholar 

  21. C.J. Peng, S.B. Krupanidhi, Applications of ferroelectrics, 1994, in ISAF’94., Proceeding of the Ninth IEEE International Symposium (IEEE Press, New York, 1995), p. 460

    Google Scholar 

  22. M.A. Lampert, P. Mark, Current Injection in Solids (Academic, New York, 1970)

    Google Scholar 

  23. A. Odagawa, H. Sato, I.H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, T. Kanno, H. Adachi, Phys. Rev. B 70, 224403 (2004)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics and the Key Laboratory of Atomic and Nanosciences, Ministry of Education, Tsinghua University, Beijing, 100084, China

    H. F. Tian, Y. G. Zhao, X. L. Jiang, J. P. Shi & H. J. Zhang

  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    H. F. Tian & J. R. Sun

Authors
  1. H. F. Tian
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  2. Y. G. Zhao
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  3. X. L. Jiang
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  4. J. P. Shi
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  5. H. J. Zhang
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  6. J. R. Sun
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Correspondence to Y. G. Zhao.

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Tian, H.F., Zhao, Y.G., Jiang, X.L. et al. Resistance switching effect in LaAlO3/Nb-doped SrTiO3 heterostructure. Appl. Phys. A 102, 939–942 (2011). https://doi.org/10.1007/s00339-011-6276-5

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  • DOI: https://doi.org/10.1007/s00339-011-6276-5

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