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SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition

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Abstract

Abstract: The large band gap (3.58 eV) and dielectric properties (ε r =50) of bulk SrHf0.67Ti0.33O3 (SHTO) make it a promising high-k material. SHTO films were deposited on p-type (100) Si single crystal substrates by pulsed laser deposition. The composition, structure, thickness, and roughness of the SHTO films have been studied using X-ray Photoelectron Spectroscopy, X-ray reflectivity, transmission electron microscopy, and atomic force microscopy. The capacitance–voltage and leakage current density characteristics of the films have been evaluated. For a post-annealed SHTO film with a thickness of 25 nm, the relatively high permittivity of 35 was achieved with the low leakage current density of 4.96×10−4 A/cm2 at −2 V bias voltage.

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Authors and Affiliations

  1. Department of Chemistry, University of Liverpool, Liverpool, L69 7ZD, UK

    L. Yan, Z. L. Xu, C. Grygiel, S. R. C. McMitchell, M. R. Suchomel, J. Bacsa, J. H. Clark, H. J. Niu, R. G. Palgrave & M. J. Rosseinsky

  2. Department of Engineering, University of Liverpool, Liverpool, L69 3GH, UK

    S. Romani & P. R. Chalker

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  1. L. Yan
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  2. Z. L. Xu
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  3. C. Grygiel
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  4. S. R. C. McMitchell
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  5. M. R. Suchomel
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Correspondence to M. J. Rosseinsky.

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Yan, L., Xu, Z.L., Grygiel, C. et al. SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition. Appl. Phys. A 104, 447–451 (2011). https://doi.org/10.1007/s00339-011-6257-8

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  • DOI: https://doi.org/10.1007/s00339-011-6257-8

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