Abstract
Chemical mechanical polishing (CMP) technology, being the mainstream technique of acquiring global planarization and nanometer level surface, has already become an attractive research item. In the case of CMP process, the indentation depth lies in the range of nanometer or sub-nanometer, huge hydrostatic pressure induced in the local deformation area which makes the material removal and surface generation process different from traditional manufacturing process. In order to investigate the physical essence of CMP technique, the authors carry out molecular dynamics (MD) analysis of chemical mechanical polishing of a silicon wafer. The simulation result shows that huge hydrostatic pressure is induced in the local area and leads to the silicon atom transform from the classical diamond structure (α silicon) to metal structure (β silicon). This important factor results in the ductile fracture of silicon and then in the acquisition of a super-smooth surface.
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Han, X., Hu, Y. & Yu, S. Investigation of material removal mechanism of silicon wafer in the chemical mechanical polishing process using molecular dynamics simulation method. Appl. Phys. A 95, 899–905 (2009). https://doi.org/10.1007/s00339-009-5097-2
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DOI: https://doi.org/10.1007/s00339-009-5097-2