Abstract
It was found that laser irradiation of silicon immersed in water can lead to regular hexagonal patterns on the silicon surface with period of ∼10 μm within several tens of minutes. The formation and the evolution of the surface patterns can be interpreted as Rayleigh–Taylor instability of the melted silicon layer under the interfacial pressure formed by fast boiling of the interfacial water at the laser-heated silicon surface. Based on the mechanism, a liquid film equation was proposed. The time evolution of the patterns was then compared with that of the well-defined classical Rayleigh–Taylor instability system. It showed that the two systems were qualitatively consistent in several aspects, supporting the Rayleigh–Taylor instability mechanism proposed.
Similar content being viewed by others
References
D. Bäuerle, Laser Processing and Chemistry (Springer, Berlin, 2000)
P. Fauchet, A.E. Siegman, Appl. Phys. Lett. 40, 824 (1982)
H.M. van Driel, J.E. Sipe, J.F. Young, Phys. Rev. Lett. 49, 1955 (1982)
Z. Guosheng, P.M. Fauchet, A.E. Siegman, Phys. Rev. B 26, 5366 (1982)
R.J. Nemanich, D.K. Biegelsen, W.G. Hawkins, Phys. Rev. B 27, 7817 (1983)
F. Keilmann, Phys. Rev. Lett. 51, 2097 (1983)
J.E. Sipe, J.F. Young, J.S. Preston, H.M. van Driel, Phys. Rev. B 27, 1141 (1983)
J.F. Young, J.S. Preston, H.M. van Driel, J.E. Sipe, Phys. Rev. B 27, 1155 (1983)
J.F. Young, J.E. Sipe, H.M. van Driel, Phys. Rev. B 30, 2001 (1984)
J.S. Preston, H.M. van Driel, J.E. Sipe, Phys. Rev. Lett. 58, 69 (1987)
S.E. Clark, D.C. Emmony, Phys. Rev. B 40, 2031 (1989)
J.S. Preston, H.M. van Driel, J.E. Sipe, Phys. Rev. B 40, 3942 (1989)
T.D. Lee, H.W. Lee, J.K. Jim, C.O. Park, Appl. Phys. A 48, 475 (1989)
A. Barborica, I.N. Mihailescu, V.S. Teodorescu, Phys. Rev. B 49, 8385 (1994)
A.J. Pedraza, Y.F. Guan, J.D. Fowlkes, D.A. Smith, J. Vac. Sci. Technol. B 22, 2823 (2004)
Y.F. Guan, A.J. Pedraza, J.D. Fowlkes, D.A. Joy, J. Vac. Sci. Technol. B 22, 2826 (2004)
J. Bonse, S. Baudach, J. Krüger, W. Kautek, M. Lenzner, Appl. Phys. A 74, 19 (2002)
F. Costache, S. Kouteva-arguirova, J. Reif, Appl. Phys. A 79, 1429 (2004)
Y. Liao, J.Y. Degorce, M. Meunier, Appl. Phys. A 82, 679 (2006)
F. Sánchez, J.L. Morenza, R. Aguiar, J.C. Delgado, M. Varela, Appl. Phys. Lett. 69, 620 (1996)
T.-H. Her, R.J. Finlay, C. Wu, S. Deliwala, E. Mazur, Appl. Phys. Lett. 73, 1673 (1998)
A.J. Pedraza, J.D. Fowlkes, D.H. Lowndes, Appl. Phys. Lett. 74, 2322 (1999)
J.D. Fowlkes, A.J. Pedraza, D.H. Lowndes, Appl. Phys. Lett. 77, 1629 (2000)
S.I. Dolgaev, S.V. Lavrishev, A.A. Lyalin, A.V. Simakin, V.V. Voronov, G.A. Shafeev, Appl. Phys. A 73, 177 (2001)
C.H. Crouch, J.E. Carey, J.M. Warrender, M.J. Aziz, E. Mazur, F.Y. Génin, Appl. Phys. Lett. 84, 1850 (2004)
M.Y. Shen, C.H. Crouch, J.E. Carey, E. Mazur, Appl. Phys. Lett. 85, 5694 (2004)
B. Brailovsky, S.V. Gaponov, V.I. Luchin, Appl. Phys. A 61, 81 (1995)
J. Bischof, D. Scherer, S. Herminghaus, P. Leiderer, Phys. Rev. Lett. 77, 1536 (1996)
G.I. Taylor, Proc. R. Soc. Lond. Ser. A 201, 192 (1950)
D.H. Sharp, Physica 12D, 3 (1984)
S.I. Kudryashov, S.D. Allen, J. Appl. Phys. 100, 104908 (2006)
O. Yavaş, A. Schilling, J. Bischof, J. Boneberg, P. Leiderer, Appl. Phys. A 64, 331 (1997)
D. Kim, H.K. Park, C.P. Grigoropoulos, Int. J. Heat Mass Transfer 44, 3843 (2001)
H.K. Park, D. Kim, C.P. Grigoropoulos, J. Appl. Phys. 80, 4072 (1996)
Y. Dou, L.V. Zhigilei, N. Winograd, B.J. Garrison, J. Phys. Chem. A 105, 2748 (2001)
F. Lang, P. Leiderer, New J. Phys. 8, 14 (2006)
G.E. Jellison, D.H. Lowndes, D.N. Mashburn, R.F. Wood, Phys. Rev. B 34, 2407 (1986)
J. Solis, C.N. Afonso, J. Appl. Phys. 69, 2105 (1990)
M. Fermigier, L. Limat, J.E. Wesfreid, P. Boudinet, C. Quilliet, J. Fluid Mech. 236, 349 (1992)
A. Oron, S.H. Davis, S.G. Bankoff, Rev. Mod. Phys. 69, 931 (1997)
M. Bestehorn, D. Merkt, Phys. Rev. Lett. 97, 127802 (2006)
H. Yonekubo, K. Katayama, T. Sawada, Appl. Phys. A 81, 843 (2005)
F. Lang, P. Leiderer, S. Georgiou, Appl. Phys. Lett. 85, 2759 (2004)
A.C. Tam, W.P. Leung, W. Zapka, W. Ziemlich, J. Appl. Phys. 71, 3515 (1992)
R. Fabrro, J. Fournier, P. Ballard, P. Devaux, J. Virmont, J. Appl. Phys. 68, 775 (1990)
C.S. Montross, T. Wei, L. Ye, G. Clark, Y.-W. Mai, Int. J. Fatigue 24, 1021 (2002)
A. Kruusing, Opt. Lasers Eng. 41, 307 (2004)
A. Kruusing, Opt. Lasers Eng. 41, 329 (2004)
A. Vrij, Discuss. Faraday Soc. 42, 23 (1966)
G. Reiter, Phys. Rev. Lett. 68, 75 (1992)
A. Sharma, R. Khanna, Phys. Rev. Lett. 81, 3463 (1998)
A. Oron, Phys. Rev. Lett. 85, 2108 (2000)
R. Seeman, S. Herminghaus, K. Jacobs, Phys. Rev. Lett. 86, 5534 (2001)
J. Becker, G. Grün, R. Seeman, H. Mantz, K. Jacobs, K.R. Mecke, R. Blossey, Nat. Mater. 2, 59 (2003)
K. Dalnoki-Veress, B.G. Nickel, J.R. Dutcher, Phys. Rev. Lett. 82, 1486 (1999)
P.J. Yoo, H.H. Lee, Phys. Rev. Lett. 91, 154502 (2003)
Y. Chou, L. Zhuang, J. Vac. Sci. Technol. 17, 3197 (1999)
E. Shäffer, T. Thurn-Albrecht, T.P. Russell, U. Steiner, Nature 403, 874 (2000)
N. Wu, W.B. Russel, Appl. Phys. Lett. 86, 241912 (2005)
E. Nicoleta, N.E. Voicu, S. Harkema, U. Steiner, Adv. Funct. Mater. 16, 926 (2006)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Chen, X.Y., Lin, J., Liu, J.M. et al. Formation and evolution of self-organized hexagonal patterns on silicon surface by laser irradiation in water. Appl. Phys. A 94, 649–656 (2009). https://doi.org/10.1007/s00339-008-4894-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-008-4894-3