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Contact barriers in a single ZnO nanowire device

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Abstract

The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler–Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler–Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K.

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Authors and Affiliations

  1. School of Electrical engineering, Korea University, Seoul, 136-701, South Korea

    Kanghyun Kim, Haeyong Kang, Hyeyoung Kim & Gyu-Tae Kim

  2. Department of Chemical Engineering and Materials Science, UC Davis, Davis, CA, 95616, USA

    Jong Soo Lee & Sangtae Kim

  3. Department of Physics, Ewha University, Seoul, 120-750, South Korea

    Woun Kang

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  1. Kanghyun Kim
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  2. Haeyong Kang
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  3. Hyeyoung Kim
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  4. Jong Soo Lee
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  5. Sangtae Kim
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  6. Woun Kang
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  7. Gyu-Tae Kim
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Correspondence to Gyu-Tae Kim.

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Kim, K., Kang, H., Kim, H. et al. Contact barriers in a single ZnO nanowire device. Appl. Phys. A 94, 253–256 (2009). https://doi.org/10.1007/s00339-008-4787-5

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  • DOI: https://doi.org/10.1007/s00339-008-4787-5

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