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Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition

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Abstract

Amorphous chalcogenide thin films were prepared from As2Se3, As3Se2 and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data.

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Authors and Affiliations

  1. Research Centre LC523 ‘Advanced Inorganic Materials’, Faculty of Chemical Technology, University of Pardubice, nám. Čs. legií 565, 532 10, Pardubice, Czech Republic

    Martin Pavlišta, Martin Hrdlička, Petr Němec, Jan Přikryl & Miloslav Frumar

  2. Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, nám. Čs. legií 565, 532 10, Pardubice, Czech Republic

    Petr Němec & Miloslav Frumar

Authors
  1. Martin Pavlišta
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  2. Martin Hrdlička
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  3. Petr Němec
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  4. Jan Přikryl
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  5. Miloslav Frumar
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Correspondence to Martin Pavlišta.

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Pavlišta, M., Hrdlička, M., Němec, P. et al. Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition. Appl. Phys. A 93, 617–620 (2008). https://doi.org/10.1007/s00339-008-4687-8

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  • DOI: https://doi.org/10.1007/s00339-008-4687-8

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