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Polarization effects and energy band diagram in AlGaN/GaN heterostructure

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Abstract

We report on a classical approach used to calculate energy band diagrams of AlGaN/GaN heterostructures. We were able to calculate the band diagram and carrier concentrations by this method also when the external bias was applied on the structure. The potential on the Schottky barrier side of the structure is defined more exactly than in a self-consistent solution of Poisson and Schrödinger equations. Dependence of the band profile and the carrier concentration of the two-dimensional gas on the piezoelectric charge can also be calculated by this approach.

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References

  1. N. Maeda, T. Nishida, N. Kobayashi, M. Tomizawa, Appl. Phys. Lett. 73, 1856 (1998)

    Article  ADS  Google Scholar 

  2. Y. Zhang, J. Singh, J. Appl. Phys. 85, 587 (1999)

    Article  ADS  Google Scholar 

  3. R.M. Chu, Y.D. Zheng, Y.G. Zhou, P. Han, B. Shen, S.L. Gu, Appl. Phys. A 75, 387 (2002)

    Article  ADS  Google Scholar 

  4. R.M. Chu, Y.G. Zhou, Y.D. Zheng, P. Han, B. Shen, S.L. Gu, Appl. Phys. Lett. 79, 2270 (2001)

    Article  ADS  Google Scholar 

  5. Y.C. Kong, Y.D. Zheng, C.H. Zhou, S.L. Gu, R. Zhang, P. Han, Y. Shi, R.L. Jiang, Appl. Phys. A 84, 95 (2006)

    Article  ADS  Google Scholar 

  6. K.A. Mikhoyan, J. Silcox, Z. Yu, W.J. Schaff, L.F. Eastman, J. Appl. Phys. 90, 1843 (2004)

    Article  ADS  Google Scholar 

  7. B. Jogai, J. Appl. Phys. 91, 3721 (2002)

    Article  ADS  Google Scholar 

  8. N. Li, D.G. Zhao, H. Yang, Solid State Commun. 132, 701 (2004)

    Article  Google Scholar 

  9. V. Fiorentini, F. Bernardini, O. Ambacher, Appl. Phys. Lett. 80, 1204 (2002)

    Article  ADS  Google Scholar 

  10. M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P.J. Schuck, R.D. Grober, Phys. Stat. Solidi B 228, 505 (2001)

    Article  ADS  Google Scholar 

  11. R. Gaska, J.W. Yang, A.D. Bykhovski, M.S. Shur, V.V. Kaminski, S.M. Soloviov, Appl. Phys. Lett. 72, 64 (1998)

    Article  ADS  Google Scholar 

  12. U. Karrer, O. Ambacher, M. Stutzmann, Appl. Phys. Lett. 77, 2012 (2000)

    Article  ADS  Google Scholar 

  13. Y.-R. Wu, M. Singh, J. Singh, J. Appl. Phys. 94, 5826 (2003)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, 84104, Bratislava, Slovakia

    J. Osvald

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  1. J. Osvald
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Correspondence to J. Osvald.

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PACS

85.30.De; 85.35.Be; 77.65.Ly

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Osvald, J. Polarization effects and energy band diagram in AlGaN/GaN heterostructure. Appl. Phys. A 87, 679–682 (2007). https://doi.org/10.1007/s00339-007-3880-5

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  • DOI: https://doi.org/10.1007/s00339-007-3880-5

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