Angular dependence of surface acoustic wave characteristics in AlN thin films on a-plane sapphire substrates

Abstract

AlN thin films have been grown on a-plane sapphire (Al₂O₃(112̄0)) substrates. X-ray diffraction measurements indicate the films are fully c-plane (0001) oriented with a full width at half maximum of the AlN(0002) rocking curves of 0.92. The epitaxial growth relationships have been determined by the reflection high energy electron diffraction analysis as AlN[11̄00]//Al₂O₃[0001] and AlN[112̄0]//Al₂O₃[11̄00]. Angular dependence of important surface acoustic wave (SAW) characteristics, such as the phase velocity and electromechanical coupling coefficient, has been investigated on the AlN(0001)/Al₂O₃(112̄0) structure. While the SAW is excited at all propagation angles with an angular dispersion of the phase velocity in the range of 5503–6045 m/s, a higher velocity shear-horizontal (SH) mode is observed only at 0°, 105° and 180° off the reference Al₂O₃[11̄00] over a 180° angular period. The phase velocity of the SH mode shows dispersion (6089–6132 m/s) as a function of the SAW wavelength. Temperature coefficients of frequency are also demonstrated for both modes.