Abstract
Platinum-induced surface reconstructions on Si(001) were investigated by scanning tunneling microscopy. The Si(001) surface shows c(4×6)+c(4×2)-type reconstruction after Pt hot deposition at 750 °C. The c(4×2) reconstruction is formed by regular arrangement of Pt ad-atoms at the hollow sites between two Si dimers on Si(001). The c(4×6) structure is formed by long-range ordering of Si dimers superimposed on the c(4×2) reconstruction. The surface reconstruction changes with the local Pt coverage and missing dimer density. An atomic model for c(4×6)+c(4×2) is proposed based on the observed c(4×4) surface reconstruction, a new surface reconstruction, which is observed following a high-temperature anneal at 900 °C. The c(4×4) surface reconstruction is regular and ordered in both the dimer-row direction and the direction perpendicular to the dimer rows. The reconstruction is formed by the regular arrangement of Si dimers and Pt ad-atoms sitting on top of the hollow sites surrounded by two dimers. An atomic model for this new reconstruction is proposed.
Similar content being viewed by others
References
J. Wang, M.S. Gudiksen, X. Duan, Y. Cui, C.M. Lieber: Science 293, 1455 (2001)
H.W. Yeom, S. Takeda, E. Rotenberg, I. Matsuda, K. Horikoshi, J. Schaefer, C.M. Lee, S.D. Kevan, T. Ohta, T. Nagao, S. Hasegawa: Phys. Rev. Lett. 82, 4898 (1999)
Y. Chen, D.A.A. Ohlberg, G. Medeiros-Ribeiro, Y.A. Chang, R.S. Williams: Appl. Phys. Lett. 76, 4004 (2000)
Y. Chen, D.A.A. Ohlberg, R.S. Williams: J. Appl. Phys. 91, 3213 (2002)
D. Lee, S. Kim: Appl. Phys. Lett. 82, 2619 (2003)
C. Ohbuchi, J. Nogami: Phys. Rev. B 66, 165323 (2002)
B.Z. Liu, J. Nogamia: J. Appl. Phys. 93, 593 (2003)
K.L. Kavanagh, M.C. Reuter, R.M. Tromp: J. Cryst. Growth 173, 393 (1997)
P.W. Pellegrini, C.E. Ludington, M.M. Weeks: J. Appl. Phys. 67, 1417 (1990)
D.X. Xu, J.P. McCaffrey, S.R. Das, G.C. Aers, L.E. Erickson: Appl. Phys. Lett. 68, 3588 (1996)
S. Papatzika, N.A. Hastas, C.T. Angelis, C.A. Dimitriadis, G. Kamarinos, J.I. Lee: Appl. Phys. Lett. 80, 1468 (2002)
L.P. Wang, J.R. Yang, J. Hwang: J. Appl. Phys. 74, 6251 (1993)
H.C. Lin, M.F. Wang, F.J. Hou, H.N. Lin, C.Y. Lu, J.T. Liu, T.Y. Huang: IEEE Electron Device Lett. 24, 102 (2003)
M. Wittmer: Phys. Rev. B 43, 4385 (1991)
S. Okada, Y. Kishikawa, K. Oura, T. Hanawa: Surf. Sci. 100, 457 (1980)
H. Itoh, S. Narui, A. Sayama, T. Ichinokawa: Phys. Rev. B 45, 11136 (1992)
D.S. Choi, J.W. Jung, D.S. Shin, M.S. Yoon, W.S. Cho, J.Y. Kim, K.H. Chae, K.H. Jeong, C.N. Whang: Surf. Sci. 505, 222 (2002)
J.Y. Maeng, S. Kim: Surf. Sci. 482–485, 1445 (2001)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
68.35.Bs; 68.37.Ef; 68.43.Fg
Rights and permissions
About this article
Cite this article
Ji, C., Ragan, R., Kim, S. et al. Surface Reconstruction of Pt/Si(001). Appl. Phys. A 80, 1301–1304 (2005). https://doi.org/10.1007/s00339-004-3150-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-004-3150-8