Skip to main content
SpringerLink
Log in

Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

The thermal stability and dielectric properties of amorphous CaZrOx film prepared by pulsed laser deposition (PLD) have been investigated. X-ray diffraction (XRD) investigation shows that CaZrOx film still remains amorphous after rapid thermal annealing at 700 °C for 10 min. Differential thermal analysis (DTA) indicates that the crystallization temperature of CaZrOx film is about 729.53 °C, which is significantly higher than that of amorphous ZrO2 films prepared at the similar conditions. High-resolution transmission electron microscopy (HRTEM) and X-ray photon spectroscopy (XPS) analysis reveal there exists a Si-O transition layer between the CaZrOx film and Si substrate. The permittivity of CaZrOx film is about 10.5 (at 1 MHz) by measuring a Pt/CaZrOx/Pt MIM structure. Under the optimized conditions, a small EOT=0.91 nm and a leakage current density of 125 mA/cm2 at 1 V gate voltage were obtained. The enhanced thermal stability and improved electrical characteristics suggest that the amorphous CaZrOx film may be an attractive gate dielectric alternative for next generation MOS field effect transistor applications.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. See the International Technology Roadmap for Semiconductors (2003 edn.) at http://public.itrs.net

  2. S.-H. Jeon, H.-S. Hwang: J. Vac. Sci. Technol. B 20, 400 (2002)

    Article  MathSciNet  Google Scholar 

  3. K. Muraoka: Appl. Phys. Lett. 80, 4516 (2002)

    Article  ADS  Google Scholar 

  4. K.J. Hubbard, D.G. Schlom: J. Mater. Res. 11, 2757 (1996)

    Article  ADS  Google Scholar 

  5. Y.W. Kwon, D.P. Norton, G.E. Jellison: Solid-State Electron. 47, 2194 (2003)

    Article  Google Scholar 

  6. M. Houssa: High-κ gate dielectric (Institute of Physics Publish Bristol and Philadelphia 2004)

  7. R. Rios, N.D. Arora: Tech. Dig. Int. Electron Devices Meet. 1994, 613 (1994)

    Google Scholar 

  8. J. Zhu, Z.G. Liu: Appl. Phys A 78, 741 (2004)

    Article  ADS  Google Scholar 

  9. K. Kobayashi, M. Yabashi, Y. Takata, T. Tokushima, S. Shin, K. Tamasaku, D. Miwa, T. Ishikawa, H. Nohira, T. Hattori, Y. Sugita, O. Nakatsuka, A. Sakai, S. Zaima: Appl. Phys. Lett. 83, 1005 (2003)

    Article  ADS  Google Scholar 

  10. C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder: Handbook of X-ray Photoelectron Spectroscopy (Physical Electron Division C 1995)

  11. T.S. Jeon, J.M. White, D.L. Kwong: Appl. Phys. Lett. 78, 368 (2001)

    Article  ADS  Google Scholar 

  12. K.J. Yang, C.M. Hu: IEEE Trans. Electron Devices 46, 1500 (1999)

    Article  ADS  Google Scholar 

  13. J. Petry, O. Richard, W. Vandervorst, T. Conard, J. Chen, V. Cosnier: J. Vac. Sci. Technol. A 21, 1482 (2003)

    Article  ADS  Google Scholar 

  14. M.L. Green, E.P. Gusev, R. Degraeve, E.L. Garfunkel: J. Appl. Phys. 90, 2057 (2001)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China

    X.Y. Qiu, H.W. Liu, F. Fang, M.J. Ha, X.H. Zhou & J.-M. Liu

  2. International Center for Materials Physics, Chinese Academy of Sciences, Shenyang, China

    X.Y. Qiu, H.W. Liu, F. Fang, M.J. Ha, X.H. Zhou & J.-M. Liu

Authors
  1. X.Y. Qiu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. H.W. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. F. Fang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M.J. Ha
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. X.H. Zhou
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. J.-M. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to J.-M. Liu.

Additional information

PACS

77.55.+f; 81.15.Fg; 73.40.Qv

Rights and permissions

Reprints and permissions

About this article

Cite this article

Qiu, X., Liu, H., Fang, F. et al. Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition. Appl. Phys. A 81, 1431–1434 (2005). https://doi.org/10.1007/s00339-004-3147-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-004-3147-3

Keywords

Search

Navigation