Abstract
We have investigated iron by EPR (electron paramagnetic resonance) and photo-EPR in initially boron doped silicon samples in which the iron concentration exceeded the boron content. A new EPR spectrum, showing orthorhombic-I symmetry was observed and could be fitted by an effective spin Hamiltonian with the parameters S=3/2, g=2.07, and E/D=0.68. We identify this spectrum as a new modification of a Fe2B center which has the same symmetry but different configuration of the constituent atoms.
Furthermore, we were able to determine the donor level of the old Fe2B center to E=EV+0.57±0.02 eV above the valence band.
We have also investigated the Fe2 donor. According to our straightforward interpretation the energy levels of the transitions from Fe2+ to Fe20 and from Fe20 to Fe2+ were determined as E=EV+0.61±0.02 eV and E=EC-0.67±0.02 eV, respectively, suggesting a lattice relaxation on electron capture, which is unusual for transition metal centers in silicon.
Similar content being viewed by others
References
K. Graff: Metal Impurities in Silicon-Device Fabrication (Springer, Berlin, Heidelberg 1995)
A.A. Istratov, H. Hieslmair, E.R. Weber: Appl. Phys. A 70, 489 (2000)
C.B. Collins, R.O. Carlson: Phys. Rev. 108, 1409 (1957)
G. Feher: Phys. Rev. 114, 1219 (1959)
G.W. Ludwig, H.H. Woodbury: Solid State Phys. 13, 223 (1962)
J.J. van Kooten, G.A. Weller, C.A.J. Ammerlaan: Phys. Rev. B 30, 4564 (1984)
P. Omling, P. Emanuelsson, W. Gehlhoff, H.G. Grimmeiss: Solid State Commun. 70, 807 (1989)
W. Gehlhoff, P. Emanuelsson, P. Omling, H.G. Grimmeiss: Solid State Phenom. 19–20, 207 (1991)
W. Gehlhoff, K. Irmscher, J. Kreissl: New Developments in Semiconductor Physics, ed. by G. Ferenczi, F. Beleznay, In Lecture Notes in Physics301 (Springer, Berlin 1988) p. 262
R.L. Kleinhenz, Y.H. Lee, J.W. Corbett, E.G. Sieverts, S.H. Muller, C.A.J. Ammerlaan: Phys. Status Solidi B 108, 363 (1981)
N.T. Son, V.E. Kustov, T. Gregorkiewicz, C.A.J. Ammerlaan: Phys. Rev. B 46, 4544 (1992)
A.A. Istratov, H. Hieslmair, E.R. Weber: Appl. Phys. A 69, 13 (1999)
J.J. van Kooten, E.G. Sieverts, C.A.J. Ammerlaan: Solid State Commun. 64, 1489 (1987)
S.H. Muller, G.M. Tuynman, E.G. Sieverts, C.A.J. Ammerlaan: Phys. Rev. B 25, 25 (1982)
C.A.J. Ammerlaan: Solid State Phenom. 6–7, 591 (1989)
W. Gehlhoff, K. Irmscher, U. Rehse: Mater. Sci. Forum 38–41, 373 (1989)
W. Gehlhoff, K.H. Segsa: Phys. Status Solidi B 115, 443 (1983)
W. Gehlhoff, U. Rehse: Solid State Phenom. 6–7, 257 (1989)
A.A. Ezhevskii, C.A.J. Ammerlaan: Sov. Phys. Semicond. 24, 851 (1990)
A.A. Ezhevskii, N.T. Son, C.A.J. Ammmerlaan: Solid State Commun. 81, 955 (1992)
C.A.J. Ammerlaan, A.B. van Oosten: Defect Control in Semiconductors, ed. by K. Sumino (Elsevier, Amsterdam 1990) p. 279
C.A.J. Ammerlaan: In Semiconductors, ed. by O. Madelung and M. Schulz, Landolt-Börnstein, New Series, Group III, Vol. 41 A2 (Springer, Berlin 2002) p. 244
G. Lucovsky: Solid State Commun. 3, 299 (1965)
H.G. Grimmeiss, L.A. Ledebo: J. Phys. C 8, 2615 (1975)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
71.55.Cn; 76.30.Fc
Rights and permissions
About this article
Cite this article
Strube, S., Vollmer, H. & Labusch, R. Electron paramagnetic resonance (EPR) and photo-EPR studies of aggregate centers with two iron atoms in silicon. Appl. Phys. A 81, 87–91 (2005). https://doi.org/10.1007/s00339-004-3031-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-004-3031-1