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Thin-film polycrystalline Si solar cells on foreign substrates: film formation at intermediate temperatures (700–1300 °C)

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Abstract

We give an overview and analysis of research on thin-film polycrystalline Si solar cells on foreign substrates, with layers formed at intermediate temperatures (700–1300 °C), covering substrates, deposition techniques and solar cell processing. The main deposition techniques that have been investigated are solution growth (SG) and chemical vapour deposition (CVD). Insufficient nucleation on foreign substrates is an important problem with SG, which could be solved with appropriate surface preparation techniques and growth conditions. With CVD, continuous layers are achieved routinely, but the electronic quality of the material is usually very low. Solar cell performance appears to be limited by a very large recombination activity of grain boundaries. Improvement can be achieved reducing the grain boundary density and recombination activity, and experimental examples are given. Devices have been demonstrated with efficiencies up to 5.5%.

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References

  1. J.H. Werner, R.B. Bergmann, R. Brendel: Solid State Phys. 34, 115 (1994)

    Google Scholar 

  2. R.B. Bergmann: Appl. Phys. A 69, 187 (1999)

    Article  ADS  Google Scholar 

  3. J.F. Nijs, J. Szlufcik, J. Poortmans, S. Sivothaman, R.P. Mertens: IEEE Trans. Electron Devices 46, 1948 (1999)

    Article  ADS  Google Scholar 

  4. K.R. Catchpole, M.J. Mc Cann: “A review of thin film silicon for solar cell applications”, Proceedings 16th European Photovoltaic Solar Energy Conference (2000) pp. 1165–1168

  5. K.R. Catchpole, M.J. Mc Cann, K.J. Weber, A.W. Blakers: Solar Energy Mater. Solar Cells 68, 173 (2001)

    Article  Google Scholar 

  6. R. Brendel: Thin-film crystalline silicon solar cells – Physics and technology, Chapt. 4 (Wiley-VCH 2003)

  7. C. Hebling, A. Eyer, F.R. Faller, A. Hurrle, R. Lüdemann, S. Reber, W. Wettling: Solid State Phys. 38, 663 (1998)

    Google Scholar 

  8. S. Reber, W. Wettling: Appl. Phys. A 69, 215 (1999)

    Article  ADS  Google Scholar 

  9. R.B. Bergmann, J. Köhler, R. Dassow, C. Zaczek, H.J. Werner: Phys. Stat. Sol. (a) 166, 587 (1998)

    Article  ADS  Google Scholar 

  10. A.K. Ghosh, C. Fishman, T. Feng: J. Appl. Phys. 51, 446 (1980)

    Article  ADS  Google Scholar 

  11. T.L. Chu: “Fabrication of polycrystalline solar cells on low-cost substrates”, USP no3961997 (1976)

  12. T.L. Chu: “Development of low cost thin film polycrystalline silicon solar cells for terrestrial applications”, NSF report NSF/RANN/SE/AER/73-07843/PR/76/4 (1977)

  13. C. Feldman, C.H. Arrington, N.A. Blum, F.G. Satkiewicz: “Vacuum-deposited polycrystalline silicon films for solar-cell applications”: SERI Subcontract report SERI/XS9/82781-4 (1980)

  14. C. Feldman , N.A. Blum , F.G. Satkiewicz: “Vacuum deposited polycrystalline silicon solar cells for terrestrial use”, Proceedings 14th IEEE PVSC (1980) p. 391

  15. R. Monna, D. Angermeier, A. Slaoui, J.C. Muller, G. Beaucarne, J. Poortmans, C. Hebling: “Poly-Si films on graphite substrates by rapid thermal chemical vapor deposition for photovoltaic application”, Proceedings of the 14th EPVSEC (1997) p. 1456

  16. T. Reindl, W. Krühler, M. Pauli, J. Müller: “Electrical and structural properties of the Si/C interface in poly-Si thin films on graphite substrates”, Proceedings First WCPEC (1994) pp. 1406–1409

  17. G. Beaucarne, S. Bourdais, A. Slaoui, J. Poortmans: Solar Energy Mater. Solar Cells 61, 301 (2000)

    Article  Google Scholar 

  18. M. Tazawa, K. Yoshimura, K. Igarashi, S. Tanemura: Solar Energy Materials and Solar Cells 48, 315 (1997)

    Article  Google Scholar 

  19. S. Bourdais, F. Mazel, G. Fantozzi, A. Slaoui: Prog. Photovolt: Res. Appl. 7, 437 (1999)

    Article  Google Scholar 

  20. S. Reber , G. Stollwerck , D. Osswald , T. Kieliba , C. Hässler: “Crystalline silicon thin-film solar cells on silicon nitride ceramics”, Proceedings 16th EPVSEC (2000) pp. 1136–1139

  21. A. von Keitz, J.A.M. van Roosmalen, C.J.J. Tool, S.E.A. Schiermeier, A.J.M.M. van Zutphen, F. Fung , G.M. Christie: “Improvement of low cost ceramic substrates for use in thin film silicon solar cells”, Proceedings 2nd WCPVSEC (1998) pp. 1829–1832

  22. British patent application No. GB9603028.3 filing date 14.02.96, publication No. GB2310314 dated 20.08.1997

  23. R.B. Bergmann, R. Brendel, M. Wolf, P. Lölgen, J. Krinke, H.P. Strunk, J. Werner: Semicond. Sci. Technol. 12, 224 (1997)

    Article  ADS  Google Scholar 

  24. N.I. Nemchuk, J.G. Couillard, D.G. Ast, F.P. Fehlner, L.R. Pinckney: “Novel Glass-ceramic substrates for thin film polycrystalline silicon solar cells”, Proceedings of the 9th Workshop on crystalline silicon solar cell materials and processes (1999) pp. 90–93

  25. T.H. Wang, T.F. Ciszek, M. Page, Y. Yan, R. Bauer, Q. Wang, J. Casey, R. Reedy, R. Matson, R. Ahrenkiel, M.M. Al-Jassim: “Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport”, Proceedings 28th IEEE PVSC (2000) pp. 138–141

  26. A. Gutjahr , C. Grasso , S.E.A. Schiermeier , P.F. Fung , A. von Keitz: “Crystalline silicon growth on silicon nitride and oxynitride substrates for thin film solar cells”, Proceedings 16th EPVSEC (2000) pp. 1557–1560

  27. Z. Shi: “Solution growth of polycrystalline silicon thin films on glass substrates for low-cost photovoltaic cell application”, PhD thesis UNSW, Australia (1992)

  28. S. Bourdais, R. Monna, D. Angermeier, A. Slaoui, N. Rauf, A. Laugier, F. Mazel, Y. Jorand, G. Fantozzi: “Combination of RT-CVD and LPE for thin silicon-film formation on alumina substrates”, Proceedings 2nd WCPVSEC (1998), pp. 1774–1777

  29. S.E.A. Schiermeier, C.J.J. Tool, J.A.M. van Roosmalen , L.J. Laas, A. von Keitz, W. C. Sinke: “LPE-growth of crystalline silicon layers on ceramic substrates”, Proceedings 2nd WCPVSEC (1998) pp. 1673–1676

  30. A. Gutjahr, I. Silier, G. Cristiani, M. Konuma, F. Banhart, V. Schöllkopf, H. Frey: “Silicon solar cell structure grown by liquid phase epitaxy on glassy carbon”, Proceedings of the 14th EPVSEC (1997) pp. 1460–1462

  31. J. Kühnle, R.B. Bergmann, J. Krinke, J.H. Werner: Mater. Res. Soc. Symp. Proc. 426, 111 (1996)

    Article  Google Scholar 

  32. Y. Bai, D.H. Ford, J.A. Rand, R.B. Hall, A.M. Barnett: “16.6% efficient Silicon-Film polycrystalline silicon solar cells”, Proceeding 26th IEEE PVSC (1997) p. 35

  33. S. Ito, Y. Kitagawa, T. Mishima, T. Yokoyama: “Direct-grown polycrystalline Si film on carbon substrate by LPE”, Technical digest 11th Int. PVSEC (1999) pp. 539–540

  34. G. Beaucarne, J. Poortmans, M. Caymax, J. Nijs , R. Mertens: “Tailored Si-layers on silicon oxide obtained by thermal CVD”, Proceedings Material Research Symposium “Thin-Film Structures for Photovoltaics” Vol. 485 (1998), pp. 89–94

  35. Y. Ishikawa, Y. Yamamoto, T. Hatayama, Y. Uraoka, T. Fuyuki: “Crystallographic analysis of high quality poly-Si thin films deposited by atmospheric pressure chemical vapor deposition”, Technical digest 12th PVSEC (2001) pp. 437–438

  36. R. Monna, D. Angermeier, A. Slaoui, J.C. Muller, G. Beaucarne, J. Poortmans, C. Hebling: “Poly-Si films on graphite substrates by rapid thermal chemical vapor deposition for photovoltaic application”, Proceedings of the 14th EPVSEC (1997) pp. 1456–1459

  37. G. Beaucarne, J. Poortmans, M. Caymax, J. Nijs , R. Mertens, D. Angermeier, S. Bourdais, R. Monna, A. Slaoui: “CVD-growth of crystalline Si on amorphous or microcrystalline substrates”, Proceedings of the 14th European Photovoltaic Solar Energy Conference (1997) pp. 1007–1010

  38. A. Slaoui, R. Monna, D. Angermeir, S. Bourdais, J.C. Muller: “Polycrystalline silicon films formation on foreign substrates by a rapid thermal-CVD technique”, Proceedings 26th IEEE-PVSEC (1997) pp. 627–630

  39. C. Schmidt, B.v. Ehrenwall, A. Braun, A. Püschel, S. Ruckmich, B. Tierock, M. Nell, H.-G. Wagemann: “Silicon deposition on structered ceramic substrates for thin film solar cells”, Proceedings 14th EPVSEC (1997) pp. 2694–2697

  40. M.E. Nell, A. Braun, B. von Ehrenwell, C. Schmidt, L. Elstner: “Solar cells from thin silicon layers on Al2O3”, Technical digest 11th Int. PVSEC-11 (1999) pp.749–750

  41. A.J.M.M. van Zutphen, A. von Keitz, M. Zeman, J.W. Metselaar: “Film-silicon deposition followed by phosphorus diffusion for photovoltaic application”, Proceedings 2nd WCPVSEC (1998)

  42. A.J.M.M. van Zutphen, M. Zeman, J.W. Metselaar, A. von Keitz, C.J.J. Tool, G. Beaucarne, J. Poortmans: “Film silicon on ceramic substrates for solar cells”, Proceedings 16th EPVSEC (2000) pp. 1412–1415

  43. R.S. Wagner, W.C. Ellis: Appl. Phys. Lett. 4, 89 (1964)

    Article  ADS  Google Scholar 

  44. D. Meakin, J. Stoemenos, P. Migliorato, N.A. Economou: J. Appl. Phys. 61, 5031 (1987)

    Article  ADS  Google Scholar 

  45. J.H. Werner, K. Taretto, U. Rau: Solid State Phenomena 80–81, 209 (2001)

  46. S. Bourdais, G. Beaucarne, J. Poortmans, A. Slaoui: Physica B 273–274, 544 (1999)

  47. G. Beaucarne, J. Poortmans, M. Caymax, J. Nijs, S. Bourdais, D. Angermeier, R. Monna, A. Slaoui: “Recrystallization-free thin-film crystalline silicon solar cells on foreign substrates”, Proceedings 2nd WCPVSEC (1998) pp. 1814–1817

  48. T.I. Kamins: “Polycrystalline silicon for integrated circuit applications”, Norwell, MA: Kluwer (1988)

  49. D.A. Smith , T.Y. Tan: Mater. Res. Soc. Symp. Proc. 5, 65 (1982)

    Article  Google Scholar 

  50. R.E. Proano, D.G. Ast: J. Appl. Phys. 66, 2189 (1989)

    Article  ADS  Google Scholar 

  51. B.L. Sopori, J. Alleman, W. Chen , T.Y. Tan , N.M. Ravindra: Mater. Res. Soc. Symp. Proc. 470, 419 (1997)

    Article  Google Scholar 

  52. G. Beaucarne: “Crystalline Si solar cells in thin layers deposited on foreign substrates using high-temperature chemical vapour deposition”, Ph.D. Thesis K.U. Leuven, 2000

  53. S. Bourdais: “Etude du dépôt et des propriétés physiques du silicium polycristallin obtenu par le procédé RTCVD sur substrats de mullite. Application aux cellules photovolta¨ıques en couches minces”, Ph.D. thesis, Université Louis Pasteur de Strasbourg (2000)

  54. Y. Ishikawa, Y. Uraoka, T. Fuyuki: “Nucleation control towards the poly-Si thin films with large grain size utilizing intermittent supply of dichlorosilane”, to be published in Proceedings 3rd WCPEC (2003)

  55. M.M. Mandurah, K.C. Saraswat, T.I. Kamins: “The physical and electrical properties of polycrystalline silicon”, Stanford Electronics Lab., Stanford Univ., Tech. Rep. G503-2 (1981)

  56. B. v. Ehrenwall, C. Schmidt, A. Braun, M. Nell, H.-G. Wagemann: “Analysis of silicon growth on structured ceramic substrates for photovoltaic application” Proceedings 2nd WCPVSEC (1998), pp. 1370–1373

  57. M.W.M. Graef, L.J. Giling, J. Bloem: J. Appl. Phys. 48, 3937 (1977)

    Article  ADS  Google Scholar 

  58. E. Rasmanis: Semiconductor Products, issue June 1963 (1963) pp. 30–33

  59. E. Rasmanis: “Method of forming single crystal films on a material in fluid form”, United States Patent Office, 3 139 361, patented June 30, 1964

  60. T. Yamada, T. Nishioka, M. Tachikawa, T. Yamada: “Deposition of polycrystalline silicon with large grain size from Al-Si melt”, Technical digest 11th PVSEC (1999) pp. 739–740

  61. T. Fuyuki, H. Yoshida , H. Matsunami: “Preferentially-oriented polycrystalline Si growth for thin-film solar cells using SiH2Cl2 decomposed in plasma”, Proceedings First WCPVSEC (1994) pp. 1383–1386

  62. H.S. Reehal, M.J. Thwaites, T.M. Bruton: Phys. Stat. Sol. (a) 154, 623 (1996)

    Article  ADS  Google Scholar 

  63. T. Matsuyama , T. Baba , T. Takahama, S. Tsuda, S. Nakano: Solar Energy Mater. Solar Cells 34, 285 (1994)

    Article  ADS  Google Scholar 

  64. D.Y. Kim, J.H. Lee, J.H. Park, J.K. Ko, J. Yi: “High temperature crystallized poly-Si on the Mo substrate for PV cell applications”, Proceedings conference ‘PV in Europe - From PV Technology to Energy Solutions’, Rome (2002) pp. 485–488

  65. A. Neugroschel, J.A. Mazer: IEEE Trans. Electron Devices, Vol. ED-29, No. 2, 225 (1982)

  66. G. Beaucarne, J. Poortmans, M. Caymax, J. Nijs, R. Mertens: Solid State phenomena Vols. 67–68, 577 (1999)

  67. G. Beaucarne, J. Poortmans, M. Caymax, J. Nijs, R. Mertens: IEEE Transactions on Electron Devices 47, 1118 (2000)

    Article  ADS  Google Scholar 

  68. G. Beaucarne, S. Bourdais, A. Slaoui, J. Poortmans: “Carrier collection in fine-grained p-n junction polysilicon solar cells”, Proceedings 28th IEEE photovoltaic specialists conference (2000) pp. 128–133

  69. C. Feldman, N.A. Blum, F.G. Satkiewicz: Proceedings 14th IEEE PVSC (1980) p. 391

  70. S.C. Choo: Solid-State Electron. 39, 308 (1996)

    Article  ADS  Google Scholar 

  71. C. Donolato: “Effective diffusion length of multicrystalline solar cells”, Semicond. Sci. Technol. 13, 781 (1998)

    Google Scholar 

  72. R.B. Bergmann: Recent Res. Devel. Crystal Growth Res. 1, 241 (1999)

    Google Scholar 

  73. P.P. Altermatt, G. Heiser: J. Appl. Phys. 91, 4271 (2002)

    Article  ADS  Google Scholar 

  74. K. Taretto, U. Rau , J.H. Werner: J. Appl Phys. 93, 5447 (2003)

    Article  ADS  Google Scholar 

  75. T. Matsuyama , N. Terada, T. Baba, T. Sawada, S. Tsuge, K. Wakisaka, S. Tsuda: J. Non-Cryst. Solids 198–200, 940 (1996)

  76. K. Yamamoto: IEEE Trans. Electron Devices 46, 2041 (1999)

    Article  ADS  Google Scholar 

  77. T. Baba , M. Shima, T. Matsuyama , S. Tsuge, K. Wakisaka , S. Tsuda: “9.2% Efficiency thin-film polycrystalline silicon solar cell by a novel Solid Phase Crystallisation Method”, Proceedings 13th EPVSEC (1995) pp. 1708–1712

  78. P.A. Basore: “Large-area deposition for crystalline silicon on glass modules”, Proceedings 3rd WCPEC 2003 Osaka, to be published

  79. G. Beaucarne, M. Caymax, I. Peytier, J. Poortmans: Solid State phenomena 80–81, 269 (2001)

  80. O. Nast, S. Wenham: J. Appl. Phys. 88, 124 (2000)

    Article  ADS  Google Scholar 

  81. N.-P. Harder, J.A. Xia, S. Oelting, O. Nast, P. Widenborg, A.G. Aberle: “Low-temperature epitaxial thickening of sub-micron poly-Si seeding layers on glass made by aluminium-induced crystallisation”, Proceedings 28th IEEE PVSC (2000) pp. 351–354

  82. A.G. Aberle, P.I. Widenborg, A. Straub, N.-P. Harder: “Polycrystalline silicon on glass thin-film solar cell research at UNSW using the seed layer concept” to be published in Proceedings 3rd WCPEC (2003)

  83. B. Rau, B. Selle, U. Knipper, S. Brehme, I. Sieber, M. Stöger, P. Schattschneider, S. Gall, W. Fuhs: “Low-temperature epitaxial Si absorber layers grown by electron-cyclotron resonance chemical vapor deposition”, to be published in Proceedings 3rd WCPEC (2003)

  84. C. Ornaghi, G. Beaucarne, J. Poortmans, J. Nijs, R. Mertens: “Aluminium induced crystallization of amorphous silicon: Influence of materials characteristics on the reaction”, presented at E-MRS 2003, to be published in Thin Solid Films

  85. E. Pihan, A. Slaoui, A. Focsa, P. Roca i Cabarrocas: “Polycrystalline silicon films on ceramic substrates by aluminium-induced crystallisation process”, to be published in Proceedings 3rd WCPEC (2003)

  86. A. Rohatgi, V. Yelundur, J. Jeong, A. Ebong, M.D. Rosenblum, J.I. Hanoka: “Fundamental understanding and implementation of Al-enhanced PECVD SiNx hydrogenation in silicon ribbons”, Technical Digest of 12th Int. PVSEC (2001), pp. 609–612

  87. M.A. Green, S.R. Wenham: Appl. Phys. Lett. 65, 2907 (1994)

    Article  ADS  Google Scholar 

  88. S. Bourdais, A. Slaoui, G. Beaucarne, J. Poortmans, E. Christoffel, A. Zerga: Solid State Phenomena 82–84, 713 (2002)

  89. R. Brendel, R.B. Bergmann, B. Fischer, J. Krinke, R. Plieninger, U. Rau, J. Reiss, H.P. Strunk, H. Wanka, J. Werner: “Transport analysis for polycrystalline silicon solar cells on glass substrates”, Proceedings 26th IEEE PVSC (1997) pp. 635–638

  90. A. Slaoui, S. Bourdais, G. Beaucarne, J. Poortmans, S. Reber: Solar Energy Mater. Solar Cells 71, 245 (2002)

    Article  Google Scholar 

  91. A.J.M.M. van Zutphen: Ph.D. thesis T.U. Delft (2001)

  92. G. Beaucarne, A. Slaoui, J. Poortmans: Thin Solid Films 403–404, 229 (2002)

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  1. IMEC vzw., kapeldreef 75, 3001, Leuven, Belgium

    G. Beaucarne & J. Poortmans

  2. Laboratoire PHASE-CNRS, 23 rue du Loess, 67037, Strasbourg, France

    S. Bourdais & A. Slaoui

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  1. G. Beaucarne
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  2. S. Bourdais
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73.40.Lq; 73.50.Gr; 84.60.It

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Beaucarne, G., Bourdais, S., Slaoui, A. et al. Thin-film polycrystalline Si solar cells on foreign substrates: film formation at intermediate temperatures (700–1300 °C). Appl. Phys. A 79, 469–480 (2004). https://doi.org/10.1007/s00339-004-2739-2

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