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Growth and optical properties of quadrangular zinc oxide nanorods on copper-filled porous silicon

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Abstract

Zinc oxide (ZnO) nanorods with quadrangular morphology have been successfully prepared on a copper-filled porous silicon substrate using a vapor phase transport method. Scanning electron microscopy showed that the diameters of the nanorods were scattered in a range of 100–400 nm and the lengths up to 2 μm. High-resolution transmission electron microscopy and a selected-area electron-diffraction pattern confirmed that the quadrangular ZnO nanorods had a single-crystal wurtzite structure and grew along the (0001) direction. The photoluminescence spectrum under excitation at 325 nm showed an ultraviolet emission at 386 nm and a strong broad green emission at 518 nm at room temperature.

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Authors and Affiliations

  1. Department of Electric Engineering, East China Normal University, Shanghai, 200062, China

    K. Yu, Y. Zhang, L. Luo, W. Wang, Z. Zhu & J. Wang

  2. School of Physics and Microelectronics, Shandong University, Jinan, 250061, China

    K. Yu & H. Ma

  3. National Key Laboratory for Crystal Materials, Shandong University, Jinan, 250100, China

    Y. Cui

  4. National Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    W. Lu

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  1. K. Yu
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  2. Y. Zhang
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  3. L. Luo
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  4. W. Wang
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  7. Y. Cui
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  8. H. Ma
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  9. W. Lu
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Correspondence to K. Yu.

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PACS

81.05.Dz; 81.05.Rm; 81.07.Bc

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Yu, K., Zhang, Y., Luo, L. et al. Growth and optical properties of quadrangular zinc oxide nanorods on copper-filled porous silicon. Appl. Phys. A 79, 443–446 (2004). https://doi.org/10.1007/s00339-004-2706-y

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  • DOI: https://doi.org/10.1007/s00339-004-2706-y

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