Abstract
‘Laser cleaning’ thresholds based on the local ablation of substrate material are studied theoretically. Results are compared with the experimental data on the cleaning of silicon wafers from spherical silica particles using laser wavelengths at 248, 532 and 1064 nm. Calculations take into account local enhancement in the laser-light intensity and are based on analytical solutions for the temperature distribution. Influence of vapor atmosphere on cleaning thresholds is studied experimentally and theoretically. Here cleaning is assisted by explosive vaporization of capillary condensed water. A possibility to increase the window for damage-free cleaning by varying the pulse duration and laser wavelength is also discussed.
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42.62.Cf; 81.65.Cf; 68.35.Np
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Arnold, N., Schrems, G. & Bäuerle, D. Ablative thresholds in laser cleaning of substrates from particulates. Appl. Phys. A 79, 729–734 (2004). https://doi.org/10.1007/s00339-004-2644-8
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DOI: https://doi.org/10.1007/s00339-004-2644-8