Abstract
Low-resistivity Ta-doped In2O3 (InTaO) films from ceramic targets of In2O3 doped with 2, 5, and 10 wt % Ta2O5 were deposited on Corning glass # 1737 substrates by magnetron sputtering. The electrical and optical properties of these films were studied. The carrier type of InTaO films was found to be n-type. The resistivity, carrier density, and Hall mobility of InTaO films were in the range of 0.28–200.2×10-4 Ω cm, 0.2–7.4×1020 cm-3, and 3–31 cm2 V-1 s-1, respectively. A minimum resistivity of 2.8×10-4 Ω cm with a mobility of 31 cm2 V-1 s-1 and a high transparency of 85% in the visible were achieved for the InTaO thin films doped with 5 wt % Ta2O5.
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81.15.Cd; 81.40.Rs; 73.90.+f
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Ju, H., Hwang, S., Jeong, CO. et al. Low-resistivity indium tantalum oxide films by magnetron sputtering. Appl. Phys. A 79, 109–111 (2004). https://doi.org/10.1007/s00339-004-2593-2
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DOI: https://doi.org/10.1007/s00339-004-2593-2