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Influence of Ar, Kr, and Xe layers on the energies and lifetimes of image-potential states on Cu(100)

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Abstract

The influence of well-ordered adlayers of Ar, Kr, and Xe on the energetic and dynamical properties of image-potential states on Cu(100) has been investigated in a comprehensive study using time-resolved two-photon photoemission (2PPE). The effect of these insulating films varies systematically with the electron affinity EA of the condensed rare gases and with the film thickness. For the electron-repulsive Ar layers (EA=-0.25 eV), a strong lifetime increase of the n=1 state from 40 fs on clean Cu(100) to as much as 10 ps at a coverage of 5 monolayers is observed. For Kr and Xe layers (EA=+0.3 and +0.5 eV, respectively), decoupling from the metal is less efficient. These layers exhibit quantum-well-like resonances of the n=2 state as a function of layer thickness. The energies of the series of states depend characteristically on the affinity level and the dielectric constant of the films. A microscopic model is developed that includes the discrete atomic structure of the adsorbate layers. It is capable of describing the experimental results to a high degree of quantitative agreement.

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Authors and Affiliations

  1. Fachbereich Physik und Zentrum für Materialwissenschaften, Philipps-Universität, 35032, Marburg, Germany

    W. Berthold & U. Höfer

  2. Max-Planck-Institut für Quantenoptik, 85748, Garching, Germany

    F. Rebentrost

  3. Physik Department E20, Technische Universität München, 85748, Garching, Germany

    P. Feulner

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  1. W. Berthold
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  2. F. Rebentrost
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  3. P. Feulner
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  4. U. Höfer
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Correspondence to W. Berthold.

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PACS

78.47.+p; 73.20.At; 77.55.+f

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Berthold, W., Rebentrost, F., Feulner, P. et al. Influence of Ar, Kr, and Xe layers on the energies and lifetimes of image-potential states on Cu(100). Appl Phys A 78, 131–140 (2004). https://doi.org/10.1007/s00339-003-2310-6

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