Electrical properties of solid-phase crystallized polycrystalline silicon films

Abstract.

Analyses of free-carrier optical absorption and Hall-effect current measurements indicated in high carrier mobilities of 32 cm²/Vs and 30 cm²/Vs, respectively, and low carrier densities of 5.0×10¹⁹ cm^-3 and 3.8×10¹⁹ cm^-3, respectively, for 1.1×10²⁰ cm^-3-phosphorus-doped solid-phase crystallized polycrystalline silicon films fabricated at 600 °C for 48 h. The silicon films had good crystalline properties of the crystalline grains and a low crystalline volume fraction of 0.43. A XeCl excimer laser anneal at 500 mJ/cm² effectively increased the carrier density to 1.1×10²⁰ cm^-3, and also increased the crystalline volume fraction to 0.93. Moreover, H₂O-vapor heat treatment at 1.3×10⁶ Pa for 3 h at 260 °C reduced the density of the defect states from 6.2×10¹⁸ cm^-3 to 2.6×10¹⁸ cm^-3.