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Deep UV laser induced luminescence in oxide thin films

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Abstract.

Time-resolved luminescence experiments have been set up in order to study the interaction of 193-nm laser radiation with dielectric thin films. At room temperature, Al2O3 coatings show photoluminescence upon ArF excimer laser irradiation, with significant intensity contributions besides the known substrate emission. Time- and energy-resolved measurements indicate the presence of oxygen-defect centers in Al2O3 coatings, which suggests a strong single-photon interaction at 193 nm by F+ and F center absorption. Measurements on highly reflective thin-film stacks, consisting of quarter-wave Al2O3 and SiO2 layers, indicate similar UV excitations, mainly from color centers of Al2O3.

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Authors and Affiliations

  1. Fraunhofer Institut für Angewandte Optik und Feinmechanik, Schillerstrasse 1, 07745 Jena, Germany, , , , , , DE

    J. Heber, N. Danz & N. Kaiser

  2. Institut für Physikalische Hochtechnologie e.V. Jena, Winzerlaer Strasse 10, 07745 Jena, Germany, , , , , , DE

    C. Mühlig & W. Triebel

  3. Southwall Europe GmbH, Southwallstrasse 1, 01900 Grossröhrsdorf, Germany, , , , , , DE

    R. Thielsch

Authors
  1. J. Heber
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  2. C. Mühlig
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  3. W. Triebel
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  4. N. Danz
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  5. R. Thielsch
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  6. N. Kaiser
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Received: 20 February 2002 / Accepted: 11 April 2002 / Published online: 5 July 2002

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Heber, J., Mühlig, C., Triebel, W. et al. Deep UV laser induced luminescence in oxide thin films . Appl Phys A 75, 637–640 (2002). https://doi.org/10.1007/s00339-002-1446-0

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  • DOI: https://doi.org/10.1007/s00339-002-1446-0

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