Summary
Hydroxy-terminated hyperbranched poly(ary1ene ether phosphine oxide) (P2) was synthesized via nucleophilic aromatic substitution reaction of AB, monomer, bis(4-hydroxyphenyl)-4'-fluorophenylphosphine oxide with K2CO3 as a base in NMP. The obtained polymer was dissolved well in NMP and DMSO, and casting of the solution gave a transparent film. The study on dissolution behavior of the film containing 10 wt% of diphenyliodonium-9,l0-dimethoxyanthracene-2-sulfonate (DIAS) as a photoacid generator and 25 wt% of 4,4'-methylenebis-[2,6-bis(hydroxymethylphenyl) phenol] (MBHP) as a cross linker revealed that 0.5 wt% aqueous tetramthylammonium hydroxide (TMAH) solution was a suitable developer for this negative-type photoresist system. The photoresist system containing 10 wt% of DIAS and 25 wt% of MBHP showed the sensitivity of 9 mJ/cm2 and the contrast of 1.6 when it was exposed to 365 nm light and postbaked at 12O°C, followed by developing with 0.5 wt% aqueous TMAH solution at room temperature. The heat-treated (300°C, 30 min) negative image did not show any distortion.
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Received: 7 October 2002/Revised version: 10 December 2002/ Accepted: 11 December 2002
Correspondence to Sang youl Kim
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In, I., Lee, H., Fujigaya, T. et al. A new photoresist based on hyperbranched poly(ary1ene ether phosphine oxide). Polymer Bulletin 49, 349–355 (2003). https://doi.org/10.1007/s00289-002-0114-z
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DOI: https://doi.org/10.1007/s00289-002-0114-z