Abstract.
A non-destructive and surface-sensitive surface photovoltage (SPV) technique was employed to investigate the influence of important wet-chemical treatments on the electronic surface properties. The preparation-induced surface roughness as well as the hydrogen and oxide coverage were additionally determined by spectroscopic ellipsometry (SE).
High values of interface charge and a high density of rechargeable interface states were observed on atomically rough surfaces and interfaces after HF-treatment and conventional wet-chemical oxidation. Both interface charge and density of rechargeable interface states could be reduced significantly by preparing an atomically flat Si surface and a well-ordered silicon/silicon oxide interface by applying special H-termination and hot-water oxidation procedures.
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Angermann, .H. Characterization of wet-chemically treated silicon interfaces by surface photovoltage measurements . Anal Bioanal Chem 374, 676–680 (2002). https://doi.org/10.1007/s00216-002-1450-4
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DOI: https://doi.org/10.1007/s00216-002-1450-4