Investigation of Submicron Linewidth Direct Deposition for High-Density IC Chip Modification by Focused Ion Beam

Submicron linewidth direct deposition is a challenge for focused ion beam technology. A high-resolution image is the first necessary condition in order to obtain such a fine deposited line. Besides this, dwell time, X and Y pixel space, beam current, residual gas pressure, and work chamber vacuum are also important parameters for the deposition process. The quality of the deposited line depends on reasonable selection and optimisation of these parameters. Based on influence factor analysis, suitable parameters are arrived at for submicron linewidth deposition. The procedure was tested by its application of high-density IC chip modification.