Abstract
At present, the diamond wire saw technology is applied to cut SiC single crystal. As a hard and brittle material, SiC slices may break in cutting due to local stress concentration and mutation. The void-defect, which is a typical defect inside the SiC single crystal can cause local stress concentration and stress field redistribution in wire sawing process. The degree of stress concentration is associated with the size and position of the defects, and understanding the sawing stress change of SiC single crystal with void defect during the wire sawing process is significant for the development of precision slicing technology. In this paper, a finite element model of wire sawing SiC single crystal containing spherical void defect was founded, and the stress concentration and sawing stress field distribution of SiC single crystal containing void defects of different relative positions and sizes have been analyzed. Numerical simulation results show that the stress concentration caused by the defects with different sizes at different relative positions in the cutting process is significantly different, and it does not always increase with the increase of defect size, but is relative to the ratio of defect size to kerf width or slice thickness. When the void defect is located inside the slice and infinitely close to the slice’s inner surface, this is the strongest influence of defect on slice stress concentration and stress field change during the sawing process, which means the possibility of slice breaking is large.
Similar content being viewed by others
References
Friedrichs P, Kimoto T, Ley L, Pensl G (2011) Silicon carbide. In: growth, defects, and novel applications, vol 1
Li J, Geng DX, Zhang DY, Qin W, Jiang YG (2018) Ultrasonic vibration mill-grinding of single-crystal silicon carbide for pressure sensor diaphragms. Ceram Int 44:3107–3112
Huang H, Zhang YX, Xu XP (2015) Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire. Int J Adv Manuf Technol 81(5-8):955–965
Pirouz P, Zhang M, Demenet JL, Hobgood HM (2002) Transition from brittleness to ductility in SiC. J Phys Condens Matter 14:12929–12945
Ni JM, Li BZ (2012) Phase transformation in high-speed cylindrical grinding of SiC and its effects on residual stresses. Mater Lett 89:150–152
Mussi A, Rabier J, Thilly L, Demenet J (2011) Plasticity and deformation microstructure of 4H-SiC below the brittle-to-ductile transition. Phys Status Solidi 8:2929–2933
Pang K, Tymicki E, Roy A (2018) Indentation in single-crystal 6H silicon carbide: experimental investigations and finite element analysis. Int J Mech Sci 144:858–864
Xiao GB, To S, Zhang GQ (2015) The mechanism of ductile deformation in ductile regime machining of 6H SiC. Comput Mater Sci 98:178–188
Hardin CW, Qu J, Shih AJ (2004) Fixed abrasive diamond wire saw slicing of single-crystal SiC wafers. Mater Manuf Process 149:355–367
Gao YF, Ge PQ, Liu TY (2016) Experiment study on electroplated diamond wire saw slicing single-crystal silicon. Mater Sci Semicond Process 56:106–114
Meng JF (2006) Research on machined technology and machined quality of endless electroplated diamond wire saw. Dissertation, University of Shandong
Li SJ, Tang AF, Liu Y, Wang JB, Cui D, Landers RG (2017) Analytical force modeling of fixed abrasive diamond wire saw machining with application to SiC monocrystal wafer processing. J Manu F Sci E-T ASME 139:1–11
Wang PZ, Ge PQ, Gao YF, Bi WB (2017) Prediction of sawing force for single-crystal silicon carbide with fixed abrasive diamond wire saw. Mater Sci Semicond Process 63:25–32
Wang PZ, Ge PQ, Li ZQ, Ge MR, Gao YF (2017) A scratching force model of diamond abrasive particles in wire sawing of single crystal SiC. Mater Sci Semicond Process 68:21–29
Li SJ, Wan B, Landers RG (2014) Surface roughness optimization in processing SiC monocrystal wafers by wire saw machining with ultrasonic vibration. P I Mech Eng B J Eng 288:725–739
Yuan FF, Ge PQ, Gao YF (2011) Effect of KDP crystal defects on stress distribution during crystal growth. J Synth Cryst 40:1435–1439
Ge PQ, Bi WB, Ge MR, Jiao Y, Lu CH (2016) Simulation research for the effect of KDP crystal defect and initial internal stress on sawing stress. Mater Sci Forum 874:9–14
Möller HJ (2015) Wafering of silicon. Semicond Semimet 92:63–109
Wang W, Yao P, Wang J, Huang CZ, Kuriyagawa T, Zhu HT, Zou B, Liu HL (2017) Elastic stress field model and micro-crack evolution for isotropic brittle materials during single grit scratching. Ceram Int 43:2981–2993
Li ZQ, Ge PQ, Bi WB, Liu TY, Wang PZ, Gao YF (2018) Coupling stress caused by thermal and slicing force in KDP crystal slicing with fixed abrasive wire saw. Int J Adv Manuf Technol 96(9-12):4333–4343
Ge MR, Gao YF, Ge PQ, Jiao Y, Bi WB (2017) A finite element analysis of sawing stress in fixed-abrasive wire saw slicing KDP crystal. Int J Adv Manuf Technol 91(5-8):2049–2057
Gao YF, Chen Y, Ge PQ, Zhang L, Bi WB (2018) Study on the subsurface microcrack damage depth in electroplated diamond wire saw slicing SiC crystal. Ceram Int 44:22927–22934
Toshiro Y, Fumiaki K, Thkesh I, Atsushi Y, Moritaka F, Takashi O (2004) Warpage analysis of silicon wafer in ingot slicing by wire-saw machine, Proceedings of the 8th international conference on numerical methods in industrial forming processes. American Institute of Physics, Ohio, pp 1459–1463
Bhagavat S, Kao I (2008) A finite element analysis of temperature variation in silicon wafers during wiresaw slicing. Int J Mach Tool Manu 48:95–106
Ren JX, Cai J, Zhou JH, Shi KN, Li XY (2018) Inverse determination of improved constitutive equation for cutting titanium alloy Ti-6Al-4V based on finite element analysis. Int J Adv Manuf Technol 97(9-12):3671–3682
Sun XK, Pei ZJ, Xin XJ, Fouts M (2004) Waviness removal in grinding of wire-sawn silicon wafers: 3D finite element analysis with designed experiments. Int J Mach Tool Manu 44:11–19
Li XS, Zhu W, Wang JQ, Deng Y (2016) Optimization of bone drilling process based on finite element analysis. Appl Therm Eng 108:211–220
Gao CY, Xiao JZ, Xu JH, Ke YL (2016) Factor analysis of machining parameters of fiber-reinforced polymer composites based on finite element simulation with experimental investigation. Int J Adv Manuf Technol 83(5-8):1113–1125
Kalajahi MH, Ahmadi SR, Oliaei SN (2013) Experimental and finite element analysis of EDM process and investigation of material removal rate by response surface methodology. Int J Adv Manuf Technol 69(1-4):687–704
Hung JP, Lai YL, Luo TL, Su HC (2013) Analysis of the machining stability of a milling machine considering the effect of machine frame structure and spindle bearings: experimental and finite element approaches. Int J Adv Manuf Technol 68(9-12):62393–62405
Funding
This work is financially supported by the National Natural Science Foundation of China (No. 51875322); the Key Research and Development Program of Shandong Province, China (2016GGX103007, 2017GGX30139); and China Postdoctoral Science Foundation (2017M622190).
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher’s note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Gao, Y., Chen, Y. Sawing stress of SiC single crystal with void defect in diamond wire saw slicing. Int J Adv Manuf Technol 103, 1019–1031 (2019). https://doi.org/10.1007/s00170-019-03579-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00170-019-03579-4