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Anisotropy of machined surfaces involved in the ultra-precision turning of single-crystal silicon—a simulation and experimental study

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Abstract

A new method was proposed for simulating the anisotropic surface quality of machined single-crystal silicon. This represents the first time that not only the mechanical properties of silicon, but also the crystal orientation, which is closely linked to the turning process, have been given consideration. In this paper, the crystallographic relationship between machined crystal planes and slip planes involved in ultra-precision turning was analyzed. The elasticity, plasticity, and brittleness properties of silicon in different crystal orientations were calculated. Based on the brittle–ductile transition mechanism of ultra-precision turning of single-crystal silicon, the orientation dependence of the surface quality of (111), (110), and (100) crystal planes were investigated via computer simulation. According to the simulation results, the surface quality of all machined planes showed an obvious crystallographic orientation dependence while the (111) crystal plane displayed better machinability than the other planes. The anisotropic surface properties of the (111) plane resulted from the continuous change of the cutting direction, which causes a change of actual angle between the slip/cleavage plane and machined plane. Anisotropic surface properties of planes (100) and (110) result from anisotropy of mechanical properties and the continuous changes of the cutting direction, causing the actual angle between slip/cleavage plane and machined plane to change simultaneously. A series of cutting experiments were carried out on the (111) and (100) crystal planes to verify the simulation results. The experimental results showed that cutting force fluctuation features and surface roughness are consistent with the anisotropy characteristics of the machined surface as revealed in simulation studies.

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References

  1. Leung TP, Lee WB, Lu XM (1998) Diamond turning of silicon substrates in ductile regime. J Mater Process Technol 73:42–48

    Article  Google Scholar 

  2. Jasinevicius RG, Pizani PS (2007) Annealing treatment of amorphous silicon generated by single point diamond turning. Int J Adv Manuf Technol 34:680–688

    Article  Google Scholar 

  3. Yan J, Syoji K, Kuriyagawa T, Suzuki H (2002) Ductile regime turning at large tool feed. J Mater Process Technol 121:363–372

    Article  Google Scholar 

  4. Fang FZ (1998) Nano-turning of single crystal silicon. J Mater Process Technol 82:95–101

    Article  Google Scholar 

  5. Yan J, Syoji K, Kuriyagawa T (2002) Fabrication of large-diameter single-crystal silicon aspheric lens by straight-line enveloping diamond-turning method. J Jpn Soc Precis Eng 68(4):1561–1565

    Article  Google Scholar 

  6. Sharif UM, Seah KHW, Rahman M, Li XP, Liu K (2007) Performance of single crystal diamond tools in ductile mode cutting of silicon. J Mater Process Technol 185:24–30

    Article  Google Scholar 

  7. Blackley WS, Scattergood RO (1991) Ductile regime model for diamond turning of brittle materials. Precis Eng 13:95–102

    Article  Google Scholar 

  8. Fang FZ, Wu H, Liu YC (2005) Modeling and investigation on machining mechanism of nano-cutting monocrystalline silicon. Int J Mach Tools Manuf 45:1681–1686

    Article  Google Scholar 

  9. Inamura T, Shimada S, Takezawa N, Nakahara N (1997) Brittle/ductile transition phenomena observed in computer simulations of machining defect-free monocrystalline silicon. Ann CIRP 46:31–34

    Article  Google Scholar 

  10. Yan J (2004) Laser micro-Raman spectroscopy of single-point diamond machined silicon substrates. J Appl Phys 95:2094–2101

    Article  Google Scholar 

  11. Tanikella BV, Somasekhar AH, Sowers AT, Nemanich RJ, Scattergood RO (1996) Phase transformations during microcutting tests on silicon. Appl Phys Lett 69:2870–2872

    Article  Google Scholar 

  12. Morris JC, Callahan DL, Kulik J, Patten JA, Scattergood RO (1995) Origins of the ductile regime in single-point diamond turning of semiconductors. J Am Ceram Soc 78:2015–2020

    Article  Google Scholar 

  13. Fang FZ, Wu H, Zhou W, Hu XT (2007) A study on mechanism of nano-cutting single crystal silicon. J Mater Process Technol 184:407–410

    Article  Google Scholar 

  14. Blake PN, Bifano T, Scattergood RO (1988) Precision machining of ceramic materials. Ceram Bull 67:1038–1044

    Google Scholar 

  15. Blake PN, Scattergood RO (1990) Ductile-regime machining of germanium and silicon. J Am Ceram Soc 73:946–957

    Article  Google Scholar 

  16. Blackley W, Scattergood RO (1990) Crystal orientation dependence of machining damage—a stress model. J Am Ceram Soc 73(10):3113–3115

    Article  Google Scholar 

  17. Shibata T, Fujii S, Makino E (1996) Ductile-regime turning mechanism of single-crystal silicon. Precis Eng 18:129–137

    Article  Google Scholar 

  18. Gatzen HH, Beck M (2003) Investigations on the friction force anisotropy of the silicon lattice. Wear 254:1122–1126

    Article  Google Scholar 

  19. Komandurib R, Chandrasekaran N, Raff LM (1999) Orientation effects in nanometric cutting of single crystal materials: an MD simulation approach. Ann CIRP 48(1):67–72

    Article  Google Scholar 

  20. Hung NP, Fu YQ (2000) Effect of crystalline orientation in the ductile-regime machining of silicon. Int J Adv Manuf Technol 16:871–876

    Article  Google Scholar 

  21. Cheung CF (2003) Influence of cutting friction on anisotropy of surface properties in ultra-precision machining of brittle single crystals. Scripta Mater 48:1213–1218

    Article  Google Scholar 

  22. Connor BPO, Marsh ER, Couey JA (2005) On the effect of crystallographic orientation on ductile material removal in silicon. Precis Eng 29:124–132

    Article  Google Scholar 

  23. Marsh ER, Sommer EJ, Deakyne TRS, Kim GA, Simonson JA (2010) Detection of orientation-dependent, single-crystal diamond tool edge wear using cutting force sensors, while spin-turning silicon. Precis Eng 34:253–258

    Article  Google Scholar 

  24. Wang MH, Lu ZS (2007) The theoretical study on the mechanism of BDT in machined Si single crystal. Key Eng Mater 339:84–89

    Article  Google Scholar 

  25. Wang MH, Lu ZS (2008) Study on brittle-ductile transition of ultra-precision turning of single crystal silicon. Key Eng Mater 375–376:11–16

    Article  Google Scholar 

  26. Evans AG, Marshall DB (1980) Wear mechanisms in ceramics. In: Rigney DA (ed) Fundamentals of friction and wear of materials. American Society for Metals, Metals Park, pp 439–452

    Google Scholar 

  27. Zhang Q, Cai CR, Zhou HF (2001) TEM observations of the dislocations from micro-indentation surface in single crystalline silicon at room temperature. J Fuzhou Univ (Natural Science) 29(2):55–58

    Google Scholar 

  28. Rice JR (1992) Dislocation nucleation from a crack tip: an analysis based on the peierls concept. J Mech Phys Solids 40(2):239–271

    Article  Google Scholar 

  29. Williams ML (1957) On the stress distribution at the base of stationary crack. J Mech Phys Solids 24:109–114

    MATH  Google Scholar 

  30. Rice J, Thomson RR (1974) Ductile versus brittle behavior of crystals. Philos Mag 29(1):73–97

    Article  Google Scholar 

  31. Wang TC (1998) Dislocation theory of the fracture criterion for anisotropic solids. Philos Mag 77(1):31–53

    Article  Google Scholar 

  32. Thomson R (1978) Brittle fracture in a ductile material with application to hydrogen embrittlement. J Mater Sci 13(1):128–142

    Article  MathSciNet  Google Scholar 

  33. Sih GC (1974) Strain-energy-density-factor applied to mixed mode crack problems. Int J Fract 10(3):305–321

    Article  Google Scholar 

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Correspondence to Minghai Wang.

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Wang, M., Wang, W. & Lu, Z. Anisotropy of machined surfaces involved in the ultra-precision turning of single-crystal silicon—a simulation and experimental study. Int J Adv Manuf Technol 60, 473–485 (2012). https://doi.org/10.1007/s00170-011-3633-7

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  • DOI: https://doi.org/10.1007/s00170-011-3633-7

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