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High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure

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Zeitschrift für angewandte Mathematik und Physik ZAMP Aims and scope Submit manuscript

Abstract.

An asymptotic analysis of the energy-transport equations for semiconductors with the scaled mean free path as small parameter is performed. Using a variant of the Chapman-Enskog method, high-field drift-diffusion models are derived. Furthermore, the dependence of the macroscopic parameters such as the mobility and the diffusivity are investigated for parabolic and non-parabolic band approximations (in the sense of Kane). Explicit expressions of the physical parameters are obtained.

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Received: August 3, 2000; revised: November 30, 2000

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Degond, P., Jüngel, A. High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure. Z. angew. Math. Phys. 52, 1053–1070 (2001). https://doi.org/10.1007/PL00001583

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  • DOI: https://doi.org/10.1007/PL00001583

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