Abstract
The main band structure features of various narrow bandgap semiconductor families are reviewed. A qualitative first principle discussion is reported, indicating the impact of relativistic corrections. As an example, a particular emphasis is stressed about the semimetal-semiconductor transition in CdxHg1−xTe alloys. Some techniques used in the characterization of extremely narrow gap materials are briefly described, showing the importance of pressure experiments.
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© 1970 Friedr. Vieweg+Sonn GmbH, Verlag
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Vérié, C. (1970). Narrow bandgap semiconductors. In: Madelung, O. (eds) Festkörperprobleme 10. Advances in Solid State Physics, vol 10. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0108431
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DOI: https://doi.org/10.1007/BFb0108431
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