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The fractional quantum hall effect

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Advances in Solid State Physics

Part of the book series: Advances in Solid State Physics ((ASSP,volume 24))

Abstract

The Fractional Quantum Hall Effect (FQHE) represents a very surprising recent discovery in solid state physics. It is observed in high-mobility, two-dimensional electron systems at low temperatures (≈1 K) in intense perpendicular magnetic fields (≈200 kG) when all carriers are confined to the lowest Landau level. Under those exceptional conditions, and at fractional filling ν of this level, the Hall resistance is found to be quantized to ρ xy = h/ie2, where i is a simple rational fraction. Concomitantly, the resistivity ρ xx drops towards zero. So far this effect has been observed close to ν=1/3, 2/3, 4/3, 5/3, 2/5, 3/5, 4/5, and 2/7 with quantum numbers i=ν quantized, in some cases, to better than 1 part in 104. The FQHE represents the unambiguous, experimental observation of a fractional quantum number. It is presently being explained as resulting from the formation of a novel incompressible quantum liquid with fractionally charged quasi-particles, and a finite gap separating the ground state from its excitations.

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  1. AT & T Bell Laboratories Murray Hill, New Jersey, USA

    Horst L. Störmer

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P. Grosse

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© 1984 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Störmer, H.L. (1984). The fractional quantum hall effect. In: Grosse, P. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107444

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  • DOI: https://doi.org/10.1007/BFb0107444

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  • Print ISBN: 978-3-528-08030-3

  • Online ISBN: 978-3-540-75374-2

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