Conclusion
In summary, the SBT thin films have been fabricated on the Pt/Ti/SiO2/Si substrate by the pulsed laser deposition. The dominant peak of the SBT thin film is (115). The SBT thin films showP r of 8.4 μC/cm2,E c of 57 kV/cm and a well-saturated hysteresis loop at 5 V. The results of fatigue measurement indicate that the SBT material has the characteristic of excellent fatigue resistance.
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Yang, P., Zheng, L. & Lin, C. The ferroelectric thin films of SrBi2Ta2O9 prepared using pulsed laser deposition. Chin. Sci. Bull. 42, 612–614 (1997). https://doi.org/10.1007/BF03182631
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DOI: https://doi.org/10.1007/BF03182631