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The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer

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Abstract

The growth and properties of high performance surface light emitting diodes which utilize a GaP window layer are presented. The devices consist of an AlGaInP double heterostructure lattice matched to a GaAs substrate. A lattice mismatched GaP layer is then grown on top of the heterostructure. The resulting upper confining and window layers have high electrical conductivity and optical transmissivity allowing for the fabrication of red-orange and yellow emitters with performance superior to existing commercial technologies. The effect of different confining and window layer structures on device performance is described, including characteristics of the shortest wavelength AlGaInP green emitters yet reported.

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Authors and Affiliations

  1. Hewlett-Packard Optoelectronics Division, 95131, San Jose, California

    R. M. Fletcher, C. P. Kuo, T. D. Osentowski, K. H. Huang & M. G. Craford

  2. Hewlett-Packard Laboratories, 94304, Palo Alto, California

    V. M. Robbins

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  1. R. M. Fletcher
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  2. C. P. Kuo
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  3. T. D. Osentowski
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  4. K. H. Huang
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  5. M. G. Craford
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  6. V. M. Robbins
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Fletcher, R.M., Kuo, C.P., Osentowski, T.D. et al. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer. J. Electron. Mater. 20, 1125–1130 (1991). https://doi.org/10.1007/BF03030219

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  • DOI: https://doi.org/10.1007/BF03030219

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