Abstract
Nominally undoped semi-insulating InP can be prepared reproducibly by annealing under controlled phosphorus pressure. We present the electrical properties of a large series of undoped InP samples before and after annealing. Spectroscopic investigations show that the specimens are contaminated by iron during annealing, but native defects have to be taken into consideration in order to explain the electrical data. Annealed InP specimens are characterized by electrical and optical measurements and the results are compared to those obtained from InP crystals grown under stoichiometry control by the horizontal gradient freeze technique.
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Hirt, G., Hofmann, D., Mosel, F. et al. Compensation mechanisms in nominally undoped semi-insulating InP and comparison with undoped InP grown under stoichiometry control. J. Electron. Mater. 20, 1065–1068 (1991). https://doi.org/10.1007/BF03030208
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DOI: https://doi.org/10.1007/BF03030208