Abstract
Relative integrated intensities of the bands of theD 1Π →X 1Σ+ system of SnO have been measured by the technique of heterochromatic photographic photometry. Using the Rydberg-Klein-Rees Franck-Condon factors andr-centroids, the variation of electronic transition momentR e with the internuclear separationr is found to beR e (r)=const. (0.564r−1) in the range of 1.865 A≤r≤2.041A. The relative band strengths are derived. Effective vibrational temperature of the source is found to be 2559 K.
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Rajamanickam, N. Intensity distribution in the bands of theD 1Π →X 1Σ+ system of SnO. Pramana - J Phys 25, 179–186 (1985). https://doi.org/10.1007/BF02847657
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DOI: https://doi.org/10.1007/BF02847657
Keywords
- Integrated intensities
- electronic transition moment
- relative band strengths
- vibrational temperature
- SnO(D 1Π →X 1Σ+) band system