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Donor states and deformation around impurity atoms in semiconductors

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Il Nuovo Cimento (1955-1965)

Summary

Assuming that impurity ions produce only point lattice defects, the change of the ionization energy of the donor state has been estimated semiquantitatively. The value of 0.117 eV has been obtained putting the displacement of the nearest neighbour ion equal to 0.1 of the atom distance. The influence of the self-deformation potential of the trapped electron is negligible.

Riassunto

Supponendo che gli ioni di impurità producano solo difetti puntuali nelle strutture si è calcolata in maniera semiquantitativa la variazione dell’energia di ionizzazione dello stato donatore. Ponendo lo spostamento dello ione più vicino eguale a un decimo della distanza atomica, si è ottenuto il valore di 0.117 eV. L’influenza del potenziale di autodeformazione dell’elettrone catturato è trascurabile.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Hokkaido University, Sapporo

    S. Shinohara

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  1. S. Shinohara
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Shinohara, S. Donor states and deformation around impurity atoms in semiconductors. Nuovo Cim 22, 18–30 (1961). https://doi.org/10.1007/BF02828991

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  • DOI: https://doi.org/10.1007/BF02828991

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