Summary
The yield for polymerization induced by (0.6/1.5) MeV protons has been measured at the surface of a silicon substrate surrounded with a CH4 atmosphere. The results scale the proton energy as the electronic stopping power does; this suggests a dependence of the efficiency of the process on the energy deposition through electronic excitations.
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References
R. M. Chribty:J. Appl. Phys.,31, 1680 (1960).
D. Kunze, O. Peters andG. Sauerbrey:Z.S. angew. Phys.,22, 69 (1967).
T. B. McCord andD. P. Cruikshank: inInfrared Astronomy IAU Symp.,96, 57 (1981).
J. W. Mayer andE. Rimini:Ion Beam: Handbook for Material Analysis (New York, N.Y., 1977).
W. Möller, Th. Pfeiffer andM. Schluckebier:Nucl. Inslrum. Methods,182–183, 297 (1981).
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Work supported in part by Istituto Nazionale di Fisica Nucleare (Gruppo V).
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Calcagno, L., Foti, G. & Strazzulla, G. Carbon build-up by fast protons on silicon substrate in CH atmosphere. Lett. Nuovo Cimento 37, 303–306 (1983). https://doi.org/10.1007/BF02818245
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DOI: https://doi.org/10.1007/BF02818245