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Mixed-valent states of rare-earth dopants in IV-VI semiconductors

  • Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997
  • Published:
Inorganic Materials Aims and scope

Abstract

Mixed-valent states of rare-earth dopants in narrow-gap IV-VI semiconductors are analyzed. A theoretical approach to describing rare-earth-doped IV-VI semiconductors is proposed in which the dopant is considered a strongly correlated system, with electronic states coupled to conduction- and valence-band states. The results are illustrated by the example of the Yb dopant, having an almost-filledf shell. It is shown that the system can be described by a narrow resonance level, whose position and width depend on the chemical potential and band gap. The possibility of the formation of mixed-valent states is demonstrated.

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Authors and Affiliations

  1. Frantsevich Institute of Materials Science Problems (Chernovtsy Branch), National Academy of Sciences of Ukraine, ul. Zhovtneva 5, 274001, Chernovtsy, Ukraine

    V. K. Dugaev

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  1. V. K. Dugaev
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Dugaev, V.K. Mixed-valent states of rare-earth dopants in IV-VI semiconductors. Inorg Mater 36, 524–526 (2000). https://doi.org/10.1007/BF02758064

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  • DOI: https://doi.org/10.1007/BF02758064

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