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Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile

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Abstract

We have analyzed the operating mechanism of the novel deep submicrometer SOI drive-in gate controlled hybrid transistor (DGCHT), which can effectively alleviate the contradiction between speed enhancement and power reduction in conventional MOS devices and can improve the output resistance. On the basis of this, the subthreshold current model of DGCHTs is proposed. The model takes into account the impact of lateral non-uniform doping profile on body effect, short-channel effect and carrier mobility. Considering the mobile charge, two-dimensional Poisson equation is solved with quasi-two-dimensional analysis and parabolic approximation of surface potential. With the surface potential obtained, the subthreshold current is figured out, including both the diffusion and drift component. The calculated results are in good agreement with the MEDICI numerical simulation results, indicating the correct description of the current characteristics of SOI DGCHT by the presented model. The model can also be considered as an important reference to the current simulation of deep submicrometer MOSFET with pocket implantation.

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Authors and Affiliations

  1. Institute of Micro-electromics, Peking University, 100871, Beijing, China

    Huang Ru, Bu Weihai, Zhang Xing & Wang Yangyuan

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  1. Huang Ru
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  2. Bu Weihai
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  3. Zhang Xing
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  4. Wang Yangyuan
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Correspondence to Huang Ru.

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Huang, R., Bu, W., Zhang, X. et al. Quasi-two-dimensional subthreshold current model of deep submicrometer SOI drive-in gate controlled hybrid transistors with lateral non-uniform doping profile. Sci China Ser F 44, 60–67 (2001). https://doi.org/10.1007/BF02713940

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  • DOI: https://doi.org/10.1007/BF02713940

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