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Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface

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Abstract

Synthesis of swift heavy ion induced metal silicide is a new advancement in materials science research. We have investigated the mixing at Co/Si interface by swift heavy ion beam induced irradiation in the electronic stopping power regime. Irradiations were undertaken at room temperature using 120 MeV Au ions at the Co/Si interface for investigation of ion beam mixing at various doses: 8 × 1012, 5 × 1013 and 1 × 1014 cm−2. Formation of different phases of cobalt silicide is identified by the grazing incidence X-ray diffraction (GIXRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation.I–V characteristics at Co/Si interface were undertaken to understand the irradiation effect on conduction mechanism at the interface.

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Authors and Affiliations

  1. Materials Science Laboratory, Centre for Non-Conventional Energy Resources, University of Rajasthan, 302 004, Jaipur, India

    Garima Agarwal, Ankur Jain, Shivani Agarwal, D. Kabiraj & I. P. Jain

  2. Nuclear Science Centre, Aruna Asaf Ali Marg, 110 067, New Delhi, India

    D. Kabiraj

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  1. Garima Agarwal
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  2. Ankur Jain
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  3. Shivani Agarwal
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  4. D. Kabiraj
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  5. I. P. Jain
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Correspondence to I. P. Jain.

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Agarwal, G., Jain, A., Agarwal, S. et al. Structural and electrical properties of swift heavy ion beam irradiated Co/Si interface. Bull Mater Sci 29, 187–191 (2006). https://doi.org/10.1007/BF02704614

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  • DOI: https://doi.org/10.1007/BF02704614

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