Abstract
The effect of various diode geometries on the degradation rate of heterojunction diodes with either GaAs or (AlGa)As in the recombination region has been studied. It is shown that GaAs diodes are particularly sensitive to edge-related degradation which varies with the current density J as J3/2. The addition of Al to the recombination region considerably reduces the degradation rate of diodes both with and without exposed edges, and data are reported for Al0.1Ga0.9As stripe-contact edge-emitting structures operating for over 20,000 hours with no change in output at 1000 A/cm2.
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References
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Kressel, H., Ettenberg, M. & Lockwood, H.F. Effect of edges on the reliability of GaAs and (AlGa) as heterojunction leds. J. Electron. Mater. 6, 467–481 (1977). https://doi.org/10.1007/BF02672228
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DOI: https://doi.org/10.1007/BF02672228