Abstract
We have grown highly strained In0.35Ga0.65As layers on GaAs substrates by molecular beam epitaxy to improve the performance of high hole mobility transistors (HHMTs). The mobility and sheet hole concentration of double side doped pseudomorphic HHMT structures at room temperature reached 314 cm2/V-s and 1.19 × 1012 cm−2, respectively. Photoluminescence measurements at room temperature show good crystalline quality of the In0.35Ga0.65As layers. This study suggests that the performance of HHMTs can be improved by using high-quality In0.35Ga0.65As layers for the channel of double side doped heterostructures pseudomorphically grown on GaAs substrates.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. Ketterson, M. Moloney, W.T. Masselink, C.K. Peng, J. Klem, R. Fischer, W. Kopp and H. MorkoÇ,IEEE Electron Device Lett. EDL-6, 628 (1985).
L.D. Nguyen, D.C. Radulescu, M.C. Foisy, P.J. Tasker and L.F. Eastman,IEEE Trans. Electron Dev. 36, 833 (1989).
H. Ono, Y. Umemoto, H. Ichikawa, M. Mori, M. Kudo, O. Kagaya and Y. Imamura,IEEE IEDM Tech. Dig. 899 (1994).
K. Muraki, S. Fukatsu, Y. Shiraki and R. Ito,J. Cry st. Growth 127, 546 (1993).
H. Toyoshima, T. Niwa, J. Yamazaki and A. Okamoto,Appl. Phys. Lett. 63, 821 (1993).
M. Kudo, T. Mishima and M. Washima,Appl. Phys. Lett. 64, 628 (1994).
H. Toyoshima, T. Niwa, J. Yamazaki and A. Okamoto,J. Appl. Phys. 75, 3908 (1994).
P.P. Ruden, M. Shur, D.K. Arch, R.R. Daniels, D.E. Grider and T.E. NohavaJEEE Trans. ElectronDev. 36, 2371 (1989).
T.J. Drummond, T.E. Zipperian, I.J. Fritz, J.E. Schirber and T.A. Plut,Appl. Phys. Lett. 49, 461 (1986).
T. Tanimoto, M. Yamane, S. Goto and Y. Uchida,Trans. IEICE E 73, 1849 (1990).
R.T. Hsu, W.C. Hsu, M.J. Kao and J.S. Wang,Appl. Phys. Lett. 66, 2864 (1995).
M. Kudo, T. Mishima and M. Washima,J. Cry st. Growth 150, 1236 (1995).
M. Kudo and T. Mishima,J. Appl. Phys. 78, 1685 (1995).
Y.C. Kao, F.G. Celii and H.Y. Liu,J. Vac. Sci. Technol. B 11, 1023 (1993).
K. Köhler, T. Schweizer, P. Ganser, P. Hiesinger and W. Rothemund,Proc. 1993 Intl. Symp. GaAs and Related Compounds, (Bristol: Inst. Phys. Conf. Ser. 136, 1994), p. 583.
S.P. Svensson, D.M. Gill, F.J. Towner and P.N. Uppal,J. Vac. Sci. Technol. B 12, 134 (1994).
M.V.B. Moreira,M.A. Py and M. Ilegems,J. Vac. Sci. Technol. B 11, 593 (1993).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Kudo, M., Mishima, T., Matsumoto, H. et al. Highly strained ln0.35Ga0.65As/GaAs layers grown by molecular beam epitaxy for high hole mobility transistors. J. Electron. Mater. 25, 944–947 (1996). https://doi.org/10.1007/BF02666728
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02666728