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MBE Growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substrates

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Abstract

We report the growth and characterization of a new wide bandgap II-VI alloy, ZnxCdyMg1-x-ySe, grown lattice-matched to InP. High quality quaternary layers with bandgaps ranging from 2.4 to 3.1 eV were grown by molecular beam epitaxy. The bandgaps and lattice constants were measured using photoluminescence and single crystal Θ-2Θ scans. Quantum well structures with quaternary barriers and ZnCdSe wells were also grown, entirely lattice matched to InP. Their photoluminescence properties suggest that these materials are suitable for the design of visible semiconductor lasers spanning the blue, green, and yellow regions of the visible range. The absence of strain in these heterostructures is expected to improve the reliability of the materials in device applications.

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Authors and Affiliations

  1. Center for Analysis of Structures and Interfaces (CASI) and Department of Chemistry, City College-CUNY, 10031, New York, NY

    Maria C. Tamargo, Abdullah Cavus, Linfei Zeng & Ning Dai

  2. NY State Center for Advanced Technology on Ultrafast Photonic Materials and Applications, City University of New York (CUNY), 10031, New York, NY

    Maria C. Tamargo, Abdullah Cavus, Linfei Zeng & Ning Dai

  3. IR Optical Technology OFS, Army Research Laboratory, 22060, Fort Belvoir, VA

    Neil Bambha, A. Gray, Fred Semendy, Wocjiech Krystek & Fred H. Pollark

  4. Department of Physics, Brooklyn College-CUNY, 11210, Brooklyn, NY

    Fred H. Pollark

Authors
  1. Maria C. Tamargo
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  2. Abdullah Cavus
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  3. Linfei Zeng
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  4. Ning Dai
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  5. Neil Bambha
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  6. A. Gray
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  7. Fred Semendy
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  8. Wocjiech Krystek
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  9. Fred H. Pollark
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Tamargo, M.C., Cavus, A., Zeng, L. et al. MBE Growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substrates. J. Electron. Mater. 25, 259–262 (1996). https://doi.org/10.1007/BF02666254

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  • DOI: https://doi.org/10.1007/BF02666254

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