Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

Abstract

Heteroepitaxial films of the III-V compounds, A1N, GaN and GaAs have been grown on insulating substrates by reactions involving Group III metal-organic compounds and Group V hydrides. The films were examined with respect to crystallography, surface topography, uniformity, residual strain, and electrical and acoustic properties with emphasis on those orientations which are of particular interest to surface acoustic wave (SAW) device applications. Aluminum nitride films up to 10 µm in thickness were grown on 1″ diameter sapphire substrates with a 5% to 10% thickness variation. The films, though characterized as single crystal by x-ray means, exhibited a grain-like structure and considerable surface faceting. The residual strain in the films depends on the crystallographic direction and increases substantially with film thickness. These films exhibit useful surface acoustic properties. Epitaxial GaN films are more easily prepared than A1N films but by contrast are semiconducting unless “doped” with Zn or Li during the growth process. Films of this material are similar crystallographically to A1N and preliminary results show that they exhibit piezoelectric properties. The lack of published data on the acoustic properties of GaN films is probably due to the difficulty in compensating the films to provide insulating layers in device structures. Preliminary results obtained on GaAs epitaxial layers are discussed briefly because of the semiconducting properties of this material.