Abstract
To obtain highly conductive buried layers in InP:Fe, MeV energy Si, S, and Si/ Simplantations are performed at 200°C. The silicon and sulfer implants gave 85 and 100 percent activation, respectively, for a fluence of 8 × 1014 cm−2. The Si/S co-implantation also gave almost 100 percent donor activation for a fluence of 8 × 1014 cm−2 of each species. An improved silicon donor activation is observed in the Si/S co-implanted material compared to the material implanted with silicon alone. The peak carrier concentration achieved for the Si/S co-implant is 2 × 1019 cm3. The lattice damage on the surface side of the profile is effectively removed after rapid thermal annealing. Multiple-energy silicon and sulfur implantations are performed to obtain thick and buried n+ layers needed for microwave devices and also hyper-abrupt profiles needed for varactor diodes.
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Vellanki, J., Nadella, R.K. & Rao, M.V. Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices. J. Electron. Mater. 22, 73–80 (1993). https://doi.org/10.1007/BF02665726
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DOI: https://doi.org/10.1007/BF02665726