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Selenium films epitaxially grown on tellurium substrates

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Abstract

The crystallinity of vacuum-deposited selenium films on clean surfaces of single crystal tellurium has been studied by reflection high energy electron diffraction (RHEED). Abrasive polishing of tellurium substrates was found to produce microscopically rough surfaces with polycrystallinity superimposed in some cases on a monocrystalline background, as indicated by RHEED patterns. Chemically prepared surfaces in the (1010) and (0001) planes, obtained by solvent cutting and polishing with chromic acid mixtures, followed by treatment with dilute hydrochloric acid, were found to be essentially free of contamination and of good crystallinity. Prolonged exposure of such surfaces to air produced a layer of contamination, but this was readily removed by heat treatment at 130°C in vacuum. Deposition of selenium under controlled conditions on the (1010) planes produced microscopically smooth monocrystalline films. For selenium deposited on (0001) substrates, good monocrystallinity was also observed but the outer surface was found to be surface faceted, giving rise to transmission type electron diffraction patterns. Scanning electron microscope examination of what appear to be “microcrack” patterns on (0001) selenium films has shown them to consist either of lines of triangular etch pits or of true microcracks.

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Azab, M.E., Sewell, P.B. & Champness, C.H. Selenium films epitaxially grown on tellurium substrates. J. Electron. Mater. 5, 381–400 (1976). https://doi.org/10.1007/BF02663366

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  • DOI: https://doi.org/10.1007/BF02663366

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