Abstract
We compare the chemical distribution of Cr, Mn, Fe and Si and electrical profiles in implanted semi-insulating substrates annealed with and without a SiO2 encapsulant in a H2-AS4 atmosphere. The implantation energy and dose are appropriate for medium power FET applications. Excellent correlation between electrical and chemical profiles have been obtained from charge neutrality considerations. Mn and Cr chemical redistribution profiles are studied as a function of annealing temperature. The Hall mobilities at liquid nitrogen temperature are correlated to the NAND ratio for different methods of annealing.
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Feng, M., Eu, V., Kanber, H. et al. Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO2 in an H2-AS4 atmosphere. J. Electron. Mater. 10, 973–986 (1981). https://doi.org/10.1007/BF02661187
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DOI: https://doi.org/10.1007/BF02661187