Abstract
The laser window problem is reviewed with emphasis on failure mechanisms, absorption processes, and material evaluation. Failure by thermal fracture and by optical distortion is discussed and the material parameters needed to calculate figures of merit for these failure modes are tabulated for a variety of materials. The exponential dependence of absorption coefficient on wavenumber for intrinsic multi-phonon processes is discussed and its use in discriminating extrinsic from intrinsic absorption emphasized. Laser calorimeter absorption measurements at 10. 6 Μm and 5. 25 Μm are described and the measured values tabulated. The use of internal reflection spectroscopy to examine the effect of various surface treatments on
Similar content being viewed by others
References
S. Sahagian and A. Pitha, Eds. Proceedings of the Conf. on High Power Infrared Laser Window Materials, Air Force Cambridge Research Labs., Bedford, Mass. (1971).
C.A. Pitha, ed., Proceedings of the Conf. on High Power Infrared Laser Window Materials (1972), AFCRL TR-73-0-0372 (I) and (II), Air Force Cambridge Research Labs., Bedford, Mass.
F.A. Horrigan, C.A. Klein, R.I. Rudko and D. T. Wilson, "High Power Gas Laser Research," Final Technical Report on Contract No. DAAH01-67-C-1589, Raytheon Research Division, Waltham, Mass. (Sept. 1968).
F.A. Horrigan and T. Deutsch, "Research in Optical Materials and Structures for High-Power Lasers," Final Technical Report under Contract DAAH01-70-C-1251, Raytheon Research Division, Waltham, Mass., Internal No. S-1335 (Sept. 1971).
M. Sparks, J. Appl. Phys.42, 5029 (1971).
F. Horrigan and R. Rudko, "Materials for High-Power CO2 Lasers," Final Technical Report under Contract DAAH01-69-C-0038, Raytheon Research Division, Waltham, Mass., Internal No. S-1170, (Sept. 1969).References (Cont'd)
R. Seitz, Harvard University, private communication.
B. Bendow and P.D. Gianino, J. Elec. Materials2, 81 (1973).
M. Sparks and M. Cottis, J. Appl. Phys.44, 789 (1973).
T.S. Moss,Optical Properties of Semiconductors (Butterworth's Scientific Publications, London, 1961), p. 15, 51.
M. Sparks in Ref. 1, p. 1.
W. G. Spitzer in Semiconductors and Semimetals,3, Optical Properties of III-V Compounds, R.K. Willardson and A.C. Beer, Ed. Academic Press, N.Y. (1967).
C. Smart, G.R. Wilkinson, A.M. Karo and J.R. Hardy in Lattice Dynamics, R. F. Wallis Ed., Pergamon Press, Oxford(1965), p. 387.
S.J. Fray, F.A. Johnson and J. E. Quarrington, ibid, p. 377.
T.F. Deutsch and R.I. Rudko, "Research in Optical Material and Structures for High-Power Lasers," Final Technical Report under Contract DAAH01-72-C-0194, Raytheon Research Division, Waltham, Mass., Internal No. S-1491 (Jan. 1973).
T.F. Deutsch, "Absorption Coefficient of Infrared Laser Window Materials," accepted for publication in J. Phys. Chem. Solids.
M. Sparks, "Theoretical Studies of High-Power Infraed Window Materials," Final Technical Report on Contract DAHC15-72-C-0129, Xonics, Inc., Van Nuys, Calif. (Dec. 1972).References (Cont'd)
T.C. McGill, R.W. Hellworth and H. V. Winston, "Infrared Absorption in Insulators Due to Multiphonon Processes," accepted for publication in J. Phys. Chem. Solids.
M. Sparks and L.J. Sham, Solid State Commun.11, 1451 (1972).
Bendow, S. Yeng and S.. Yukon, to be published in Phys. Rev. B.
F.A. Horrigan and T. F. Deutsch, "Research in Optical Materials and Structures for High Power Lasers," Second Quarterly Report under Contract DAAH01-70-C-1251, Raytheon Research Division, Waltham, Mass. (Dec. 1970).
A.G. Thompson, J. Elec. Mat.2, 47 (1973).
D.A. Pinnow and T. C. Rich, Appl. Optics12, 984 (1973).
N.J. Harrick, Internal Reflection Spectroscopy, Wiley, New York (1967).
V.A. Bershtein and V. V. Nikitin, Soviet Physics, Doklady15, 163 (1970).
A.V. Rzhanov and M. P. Sinyukov, Soviet Physics, Semiconductors2, 247 (1968).
C. C. Chang, Surface Sci.25, 53 (1971).
P.W. Palmberg,Auger Electron Spectroscopy, preprint available from Physical Electronics, Inc., 7317 South Washington Ave. , Edina, Minn. 55435.
M.V. Klein, S.O. Kennedy, T.T. Gie, B. Wedding, Mat. Res. Bull.3, 677 (1968).
J. Rolfe, F.R. Lipsett and W. J. King, Phys. Rev.123, 447 (1961).References (Cont'd)
W. KÄnzig and M.H. Cohen, Phys. Rev. Lett.3, 509 (1959).
K. Nakamoto,Infrared Spectra of Inorganic and Coordination Compounds, New York, Wiley - Interscience (1970), p. 324.
Bulletin RT-TB-133 Intelcom, P.O. Box 80817, San Diego, Calif. 92138.
A.E. Barrington, R. F. K. Herzog and W. P. Poschenreider, Prog. in Nuclear Energy, Series IX, Analytical Chemistry7, Pergamon, N.Y. (1966), p. 243.
S.D. Smith, J. R. Hardy, and E.W.J. Mitchell, Proc. of the Int'l Conf. on Physics of Semiconductors, Exeter, 1962, Instit. of Physics and the Physical Society, London (1962), p. 529.
H.M. Strong and R.H. Wentorf, Jr., Naturwissenschaften,59, 1 (1972).
A. F. Armington, H. Poser and H. Lipson J. Elec. Mat.2, 127 (1973).
P.A. Miles, D.W. Readey, R.T. Newberg and C.R. Snider, "Research of Halide Superalloy Windows," Qtrly Tech. Report No. 3 under Cont. F19628-72-C-0307, Raytheon Research Division, Waltham, Mass. (1973).
N. Bloembergen, Applied Optics12, 661 (1973).
J. Pappis, P.A. Miles and R. Donadio in Proc. of Conf. on High Power Infrared Laser Window Materials (1972); C.A. Pitha, ed. AFCRL TR-73-0-0372 (II), AFCRL, Bedford, Mass. Paper No. 40, p. 737.
A.R. Hilton, H.C. Hafner and R.L. Rasmussen, ibid, Paper No. 37, p. 693.
C.T. Moynihan, P.B. Macebo, M. Maklad and R. Mohr, ibid, Paper No. 38, p. 705 and priv. comm.
Author information
Authors and Affiliations
Additional information
This research was sponsored by the Advanced Research Projects Agency of the Department of Defense under ARPA Order 1180 and was monitored by the U.S. Army Missile Command under Contract No. DAAH01-72-C-0194. Views and conclusions expressed herein are the primary responsibility of the author or the contractor and should not be interpreted as representing the official opinion or policy of USAMICOM, ARPA, DOD or any other agency of the Government.
Rights and permissions
About this article
Cite this article
Deutsch, T.F. Laser window materials — An overview. J. Electron. Mater. 4, 663–719 (1975). https://doi.org/10.1007/BF02661168
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02661168