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Surface condition of Si implanted GaAs revealed by the noncontact laser/microwave method

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Abstract

The surface recombination of GaAs which has a heavily doped surface layer formed by Si implantation and subsequent annealing has been investigated using the noncontact laser/microwave evaluation method. The experimental results of the samples implanted with doses ranging from 1.0 × 1011 to 3.9 × 1012 cm−2 at an energy of 100 keV indicate that the effective surface recombination velocity decreases with dosage because of the heavily doped layer formed after the annealing. On the other hand, the results of the samples implanted with a dose of 3.9 × 1012 cnr−2 at energies raging from 50 to 180 keV indicate that the effective surface recombination velocity increases with energy. This is mainly due to the decrease in the peak carrier concentration in the heavily doped layer.

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Authors and Affiliations

  1. Center for Cooperative Research, Nagoya Institute of Technology, Gokiso, Showa, 466, Nagoya, Japan

    Masaya Ichimura

  2. Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, 466, Nagoya, Japan

    Hideaki Yoshida & Akira Usami

Authors
  1. Masaya Ichimura
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  2. Hideaki Yoshida
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  3. Akira Usami
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Ichimura, M., Yoshida, H. & Usami, A. Surface condition of Si implanted GaAs revealed by the noncontact laser/microwave method. J. Electron. Mater. 25, 1088–1092 (1996). https://doi.org/10.1007/BF02659908

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  • DOI: https://doi.org/10.1007/BF02659908

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