Abstract
This paper presents a comparative study of the properties of GaN grown by organometallic vapor phase epitaxy, using both a GaN and A1N buffer layer, as a function of sapphire orientation (c-plane vs a-plane). Results are presented for varying the thickness of the buffer layer, varying the growth temperature of the GaN film, and also varying the ammonia/trimethylgallium mass flow ratio. The electron Hall mobilities of GaN films grown on an A1N buffer layer were, in general, higher compared to films grown using a GaN buffer layer. In addition, growth on a-plane sapphire resulted in higher quality films (over a wider range of buffer thicknesses) than growth on c-plane sapphire. The room temperature electron mobilities were also found to be dependent on, not only the growth temperature, but also the ammonia/trimethylgallium mass flow ratio.
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References
H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda,Appl. Phys. Lett. 48, 353 (1986).
S. Nakamura,Jpn. J. Appl. Phys. 30, L1705 (1991).
J.N. Kuznia, M.A. Khan, D.T. Olson, R. Kaplan and J.A. Freitas, Jr.,J. Appl. Phys. 73, 4700 (1993).
L.B. Rowland, K. Doverspike, D.K. Gaskill and J.A. Freitas Jr.,Mater. Res. Soc. Symp. Proc, 339 (1994).
T.D. Moustakas, T. Lei and R.J. Molnar,Physica B 185, 36 (1993).
C. Sun and M. Razeghi,Appl. Phys. Lett. 63, 973 (1993).
D.K. Wickenden, K.R. Faulkner, R.W. Brander and B.J. Isherwood,J. Cryst. Growth 9, 158 (1971).
H. Amano, K. Hiramatsu, M. Kito, N. Sawaki and I. Akasaki,J. Cryst. Growth 93, 79 (1988).
H. Amano, K. Hiramatsu and I. Akasaki,Jpn. J. Appl. Phys. 27, L1384 (1988).
N. Kuwano, T. Shiraishi, A. Koga, K. Oki, K. Hiramatsu, H. Amano, K. Itoh and I. Akasaki,J. Cryst. Growth 115, 381 (1991).
Private communication with K. Heikkinen at Union Carbide.
L.B. Rowland, K. Doverspike, A. Giordana, M. Fatemi, D.K. Gaskill, M. Skowronski and J.A. Freitas, Jr,Inst. Phys. Conf. Ser. 137,429(1993).
E.R. Glaser, T.A. Kennedy, H.C. Crookham, J.A. Freitas,Jr., M.A. Khan, D.T. Olson and J.N. Kuznia,Appl. Phys. Lett. 63, 2673 (1993).
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Doverspike, K., Rowland, L.B., Gaskill, D.K. et al. The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire. J. Electron. Mater. 24, 269–273 (1995). https://doi.org/10.1007/BF02659686
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DOI: https://doi.org/10.1007/BF02659686