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The determination of impact ionization coefficients in ln0.2Ga0.8As/GaAs strained-layer superlattice mesa photodiodes

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Abstract

Sandia National Laboratories, Albuquerque, NM 87185 Photocurrent multiplication measurements have been performed on two different In0.2Gao0.8As/GaAs strained-layer superlattice (SLS)p +n photodiode structures which are designed to permit simultaneous injection of electrons and holes. Initial devices were found to suffer from low quantum efficiencies produced by small electron diffusion lengths as well as mixed injection caused by lower than expected optical absorption coefficients in the SLSn + contact layers for hole injection conditions. Using a second device structure having a thicker n+ contact region, the electron multiplication factors are found to be larger than that of holes with a ratio of the electron to hole ionization coefficient of 1.4 for fields between 2.9 and 3.4 x 105V/cm.

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References

  1. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth27, 118 (1974).

    CAS  Google Scholar 

  2. G. C. Osbourn, Phys. Rev. B27, 5126 (1983).

    Article  CAS  Google Scholar 

  3. G. E. Bulman, V. M. Robbins and G. E. Stillman, IEEE Electron, Dev.ED-32, 2425 (1985).

    Google Scholar 

  4. T. P. Pearsall, Appl. Phys. Lett.36, 218 (1980).

    Article  CAS  Google Scholar 

  5. G. E. Bulman, D. R. Myers, T. E. Zipperian, L. R. Dawson, J. J. Wiczer and R. M. Biefeld, Appl. Phys. Lett.47, 733 (1985).

    Article  CAS  Google Scholar 

  6. G. E. Stillman and C. M. Wolfe, inSemiconductors and Semimentals, Vol. 12, edited by R. K. Willardson and A. C. Beer (Academic, New York, 1979).

    Google Scholar 

  7. I. Umebu, A.N.M.M. Choudhury and P. N. Robson, Appl. Phys. Lett.36, 302 (1980).

    Article  CAS  Google Scholar 

  8. G. E. Bulman, Ph.D. Dissertation, Department of Physics, Univ. of Illinois, 1983, p. 144.

  9. G. E. Bulman, L. W. Cook and G. E. Stillman, Solid-State Electron.25, 1189 (1982).

    Article  CAS  Google Scholar 

  10. M. H. Woods, W. C. Johnson and M. A. Lampert, Solid-State Electron.16, 381 (1973).

    Article  Google Scholar 

  11. S. M. Sze,Physics of Semiconductor Devices, Second Edition (Wiley, New York, 1981), pp. 800–805.

    Google Scholar 

  12. G. C. Osbourn, private communication.

  13. P. L. Gourley, R. M. Biefeld, T. E. Zipperian and J. J. Wiczer, Appl. Phys. Lett.44, 983 (1984).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Amoco Research Center, MS-F4, P.O. Box 400, 60566, Naperville, IL, USA

    G. E. Bulman, T. E. Zipperian & L. R. Dawson

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  1. G. E. Bulman
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  2. T. E. Zipperian
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  3. L. R. Dawson
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Bulman, G.E., Zipperian, T.E. & Dawson, L.R. The determination of impact ionization coefficients in ln0.2Ga0.8As/GaAs strained-layer superlattice mesa photodiodes. J. Electron. Mater. 15, 221–227 (1986). https://doi.org/10.1007/BF02659635

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  • DOI: https://doi.org/10.1007/BF02659635

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