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Copper outdiffusion from CdZnTe substrates and its effect on the properties of metalorganic chemical vapor deposition-grown HgCdTe

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Abstract

We report that HgCdTe (MCT) epilayers grown by metalorganic chemical vapor deposition can be doped by copper outdiffusing from CdZnTe substrates. The copper content in the substrates was determined by the choice of the purity of the starting raw materials. Copper diffusion could be controlled by adjusting the tellurium precipitate density in the substrates. Growing on substrates with a high concentration of tellurium precipitates resulted in low doped MCT epilayers whereas a high copper concentration was found in MCT grown on substrates with a lower concentration of tellurium precipitates. A mechanism whereby tellurium precipitates getter copper during the post-growth cooldown of CdZnTe boules and trap copper in the substrates is proposed.

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Authors and Affiliations

  1. Research Division, Raytheon Company, 02173, Lexington, MA

    R. Korenstein, R. J. Olson & D. Lee

  2. Texas Instruments, Central Research Laboratories, 75265, Dallas, TX

    P. K. Liao & C. A. Castro

Authors
  1. R. Korenstein
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  2. R. J. Olson
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  3. D. Lee
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  4. P. K. Liao
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  5. C. A. Castro
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Korenstein, R., Olson, R.J., Lee, D. et al. Copper outdiffusion from CdZnTe substrates and its effect on the properties of metalorganic chemical vapor deposition-grown HgCdTe. J. Electron. Mater. 24, 511–514 (1995). https://doi.org/10.1007/BF02657955

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  • DOI: https://doi.org/10.1007/BF02657955

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