Abstract
Impurity levels were tracked through the stages of substrate and liquid phase epitaxy (LPE) layer processing to identify sources of elements which degrade infrared photodetector performance. Chemical analysis by glow discharge mass spectrometry and Zeeman corrected graphite furnace atomic absorption effectively showed the levels of impurities introduced into CdZnTe substrate material from the raw materials and the crystal growth processes. A new purification process(in situ distillation zone refining) for raw materials was developed, resulting in improved CdZnTe substrate purity. Substrate copper contamination was found to degrade the LPE layer and device electrical properties, in the case of lightly doped HgCdTe. Anomalous HgCdTe carrier type conversion was correlated to certain CdZnTe and CdTe substrate ingots.
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Tower, J.P., Tobin, S.P., Kestigian, M. et al. CdZnTe substrate impurities and their effects on liquid phase epitaxy HgCdTe. J. Electron. Mater. 24, 497–504 (1995). https://doi.org/10.1007/BF02657953
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DOI: https://doi.org/10.1007/BF02657953