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The structural and piezoelectric properties of epitaxial AℓN on Aℓ2O3

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Abstract

The piezoelectric properties of epitaxial AℓN films grown by the method of chemical vapor deposition utilizing trimethylaluminum and ammonia as chemical reactants were investigated. Large variations of the measured electromechanical coupling coefficient, k2, were found in different regions of the same sample and on different samples having approximately the same h/λ value. Electron microscope observations of replicated as-grown and etched surfaces of epitaxial AℓN were used to show a relationship between surface facet ordering and the magnitude of k2. A plot of k2 measured at various h/λ values shows k2 as large as 0.6% for films grown at a rate of ˜0.2 µm/min and measured at ˜400 MHz.

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Authors and Affiliations

  1. Electronics Research Division, Rockwell International Autonetics Group, 3370 Miraloma Avenue, 92803, Anaheim, California

    F. A. Pizzarello & J. E. Coker

Authors
  1. F. A. Pizzarello
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  2. J. E. Coker
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Additional information

This work was supported in part by Contract No. F33615-72-C-1473, Air Force Materials Laboratory, Wright-Patterson Air Force Base, Ohio

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Pizzarello, F.A., Coker, J.E. The structural and piezoelectric properties of epitaxial AℓN on Aℓ2O3 . J. Electron. Mater. 4, 25–36 (1975). https://doi.org/10.1007/BF02657834

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  • DOI: https://doi.org/10.1007/BF02657834

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